Inventor · disambiguated record
Nein-Yi Li
Also filed as: LI NEIN Y · LI NEIN-YI
11 granted patents·4 pending applications·118 citations·filing 2000–2021
89Inventor score
Top patents by PatentIndex Score
15 records- 0193US10530128B2Single-chip series connected VCSEL arrayTRILUMINA CORP·Filed 2018·Granted Jan 7, 2020·7 cites·35 claims
- 0293US8189642B1VCSEL semiconductor deviceLI NEIN-YI·Filed 2010·Granted May 29, 2012·32 cites·12 claims
- 0389US10944242B2Surface-mount compatible VCSEL arrayLUMENTUM OPERATIONS LLC·Filed 2018·Granted Mar 9, 2021·4 cites·60 claims
- 0484US6765242B1Npn double heterostructure bipolar transistor with ingaasn base regionSANDIA CORP·Filed 2000·Granted Jul 20, 2004·46 cites·55 claims
- 0583US7339109B2Apparatus and method for optimizing the efficiency of germanium junctions in multi-junction solar cellsEMCORE CORP·Filed 2001·Granted Mar 4, 2008·23 cites·31 claims
- 0682US10756515B2Single-chip series connected VCSEL arrayTRILUMINA CORP·Filed 2020·Granted Aug 25, 2020·1 cites·12 claims
- 0779US11482835B2VCSEL device with multiple stacked active regionsLUMENTUM OPERATIONS LLC·Filed 2020·Granted Oct 25, 2022·1 cites·20 claims
- 0871US12191635B2Surface-mount compatible VCSEL arrayLUMENTUM OPERATIONS LLC·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 0967US8957306B2Multijunction solar cell with two step diffusion region in substrateSTAN MARK A·Filed 2008·Granted Feb 17, 2015·2 cites·15 claims
- 1065US8859886B2Method of fabricating a multijunction solar cellSTAN MARK A·Filed 2010·Granted Oct 14, 2014·1 cites·12 claims
- 1164US7629240B2Controlling dopant diffusion in a semiconductor regionEMCORE SOLAR POWER INC·Filed 2005·Granted Dec 8, 2009·1 cites·15 claims
- 1243US2009041074A1Passivation of Vertical Cavity Surface Emitting LasersEMCORE CORP·Filed 2007·Application pending·0 cites
- 1339US2007217472A1VCSEL semiconductor devices with mode controlCOLLINS DOUG·Filed 2006·Application pending·0 cites
- 1437US2018278022A1Surface-emitting semiconductor laserSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Application pending·0 cites
- 1534US2002102847A1MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applicationsFiled 2001·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Nein-Yi Li files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →