Inventor · disambiguated record
Shao-Chang Huang
Also filed as: HUANG SHAO-CHANG
61 granted patents·14 pending applications·508 citations·filing 2001–2024
98Inventor score
Files withVANGUARD INT SEMICONDUCT CORP36TAIWAN SEMICONDUCTOR MFG19EMEMORY TECHNOLOGY INC7UNITED MICROELECTRONICS CORP5HUANG SHAO-CHANG3
Top patents by PatentIndex Score
75 records- 0197US6573566B2Low-voltage-triggered SOI-SCR device and associated ESD protection circuitUNITED MICROELECTRONICS CORP·Filed 2001·Granted Jun 3, 2003·135 cites·32 claims
- 0296US11652477B2Voltage tracking circuits and electronic circuitsVANGUARD INT SEMICONDUCT CORP·Filed 2021·Granted May 16, 2023·4 cites·20 claims
- 0394US11569657B1Protection circuitsVANGUARD INT SEMICONDUCT CORP·Filed 2021·Granted Jan 31, 2023·3 cites·20 claims
- 0494US10523002B2Electrostatic discharge protection circuitVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Dec 31, 2019·7 cites·15 claims
- 0590US11810872B2Semiconductor device structure comprising source and drain protective circuits against electrostatic discharge (ESD)VANGUARD INT SEMICONDUCT CORP·Filed 2022·Granted Nov 7, 2023·1 cites·9 claims
- 0690US6768619B2Low-voltage-triggered SOI-SCR device and associated ESD protection circuitUNITED MICROELECTRONICS CORP·Filed 2003·Granted Jul 27, 2004·44 cites·8 claims
- 0788US10177135B2Integrated circuit and electrostatic discharge protection circuit thereofVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Jan 8, 2019·6 cites·20 claims
- 0888US7660087B2Electrostatic discharge avoiding circuitEMEMORY TECHNOLOGY INC·Filed 2008·Granted Feb 9, 2010·17 cites·15 claims
- 0987US8120984B2High-voltage selecting circuit which can generate an output voltage without a voltage dropHUANG SHAO-CHANG·Filed 2010·Granted Feb 21, 2012·16 cites·13 claims
- 1086US12334920B2Level shifterVANGUARD INT SEMICONDUCT CORP·Filed 2023·Granted Jun 17, 2025·1 cites·16 claims
- 1186US11121212B1High-voltage semiconductor deviceVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Sep 14, 2021·2 cites·14 claims
- 1286US7911752B1Programming PAD ESD protection circuitEMEMORY TECHNOLOGY INC·Filed 2009·Granted Mar 22, 2011·23 cites·10 claims
- 1386US7420250B2Electrostatic discharge protection device having light doped regionsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 2, 2008·14 cites·19 claims
- 1486US7411767B2Multi-domain ESD protection circuit structureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Aug 12, 2008·42 cites·26 claims
- 1585US10867989B2Driving circuit having electrostatic discharge protectionVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted Dec 15, 2020·4 cites·12 claims
- 1684US7663851B2Tie-off circuit with ESD protection featuresTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 16, 2010·11 cites·17 claims
- 1783US10224282B2Protection device and operation system utilizing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Mar 5, 2019·4 cites·20 claims
- 1883US7706114B2ESD avoiding circuits based on the ESD detectors in a feedback loopEMEMORY TECHNOLOGY INC·Filed 2007·Granted Apr 27, 2010·12 cites·24 claims
- 1981US10643987B2Semiconductor structuresVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted May 5, 2020·3 cites·32 claims
- 2079US10056897B1Power-on control circuit with state-recovery mechanism and operating circuit utilizing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Aug 21, 2018·3 cites·20 claims
- 2178US11476207B2Semiconductor device structure comprising source and drain protective circuits against electrostatic discharge (ESD)VANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Oct 18, 2022·2 cites·8 claims
- 2275US7453122B2SOI MOSFET device with reduced polysilicon loading on active areaTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 18, 2008·5 cites·12 claims
- 2375US6671147B2Double-triggered electrostatic discharge protection circuitUNITED MICROELECTRONICS CORP·Filed 2001·Granted Dec 30, 2003·20 cites·25 claims
- 2474US11088541B2Integrated circuit and electrostatic discharge protection circuit thereofVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted Aug 10, 2021·2 cites·15 claims
- 2574US8089798B2Method for operating one-time programmable read-only memoryLAI TSUNG-MU·Filed 2009·Granted Jan 3, 2012·5 cites·4 claims
- 2674US6762466B2Circuit structure for connecting bonding pad and ESD protection circuitUNITED MICROELECTRONICS CORP·Filed 2002·Granted Jul 13, 2004·21 cites·9 claims
- 2773US7271988B2Method and system to protect electrical fusesTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 18, 2007·17 cites·6 claims
- 2872US7291888B2ESD protection circuit using a transistor chainTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 6, 2007·5 cites·19 claims
- 2971US12444935B2Electrostatic discharge protection circuitVANGUARD INT SEMICONDUCT CORP·Filed 2023·Granted Oct 14, 2025·0 cites·12 claims
- 3070US10164627B1Power-on control circuitVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Dec 25, 2018·1 cites·20 claims
- 3170US7420793B2Circuit system for protecting thin dielectric devices from ESD induced damagesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Sep 2, 2008·4 cites·16 claims
- 3270US7323752B2ESD protection circuit with floating diffusion regionsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jan 29, 2008·16 cites·22 claims
- 3369US7166876B2MOSFET with electrostatic discharge protection structure and method of fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jan 23, 2007·14 cites·44 claims
- 3467US7405445B2Semiconductor structure and method for ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 29, 2008·13 cites·14 claims
- 3567US7217984B2Divided drain implant for improved CMOS ESD performanceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 15, 2007·4 cites·17 claims
- 3663US7002216B2ESD performance using separate diode groupsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 21, 2006·10 cites·15 claims
- 3762US7616416B2System to protect electrical fusesTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 10, 2009·4 cites·15 claims
- 3862US6927457B2Circuit structure for connecting bonding pad and ESD protection circuitUNITED MICROELECTRONICS CORP·Filed 2004·Granted Aug 9, 2005·10 cites·4 claims
- 3961US12107415B2Electrostatic discharge protection circuit and electronic circuitVANGUARD INT SEMICONDUCT CORP·Filed 2022·Granted Oct 1, 2024·0 cites·20 claims
- 4059US12500410B2Driving circuitVANGUARD INT SEMICONDUCT CORP·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 4158US11811222B2Electrostatic discharge protection circuitVANGUARD INT SEMICONDUCT CORP·Filed 2021·Granted Nov 7, 2023·0 cites·18 claims
- 4257US2025309639A1Electrostatic discharge protection circuitVANGUARD INT SEMICONDUCT CORP·Filed 2024·Application pending·0 cites
- 4356US11527884B2Protection circuitVANGUARD INT SEMICONDUCT CORP·Filed 2021·Granted Dec 13, 2022·0 cites·18 claims
- 4456US7965481B2High voltage tolerance circuitEMEMORY TECHNOLOGY INC·Filed 2008·Granted Jun 21, 2011·3 cites·4 claims
- 4554US11940828B2Voltage tracking circuits with low power consumption and electronic circuits using the sameVANGUARD INT SEMICONDUCT CORP·Filed 2022·Granted Mar 26, 2024·0 cites·22 claims
- 4654US2024178309A1Semiconductor deviceVANGUARD INT SEMICONDUCT CORP·Filed 2022·Application pending·0 cites
- 4752US12419115B2Electrostatic discharge protection circuitVANGUARD INT SEMICONDUCT CORP·Filed 2022·Granted Sep 16, 2025·0 cites·15 claims
- 4852US11894430B2Semiconductor structureVANGUARD INT SEMICONDUCT CORP·Filed 2021·Granted Feb 6, 2024·0 cites·16 claims
- 4951US11574997B1Semiconductor structure and operation circuitVANGUARD INT SEMICONDUCT CORP·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 5051US2008296701A1One-time programmable read-only memoryEMEMORY TECHNOLOGY INC·Filed 2007·Application pending·0 cites
Showing the top 50 of 75 patent records by PatentIndex Score.
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