Inventor · disambiguated record
Vladimir Rumennik
Also filed as: RUMENNIK VLADIMIR
21 granted patents·1 pending application·1,975 citations·filing 1978–2004
97Inventor score
Top patents by PatentIndex Score
22 records- 0199US6207994B1High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 1999·Granted Mar 27, 2001·367 cites·7 claims
- 0297US6168983B1Method of making a high-voltage transistor with multiple lateral conduction layersPOWER INTEGRATIONS INC·Filed 1999·Granted Jan 2, 2001·323 cites·45 claims
- 0396US6828631B2High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2004·Granted Dec 7, 2004·75 cites·13 claims
- 0496US6724041B2Method of making a high-voltage transistor with buried conduction regionsPOWER INTEGRATIONS INC·Filed 2002·Granted Apr 20, 2004·70 cites·20 claims
- 0596US6570219B1High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2000·Granted May 27, 2003·83 cites·58 claims
- 0695US6777749B2High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2003·Granted Aug 17, 2004·58 cites·7 claims
- 0795US5258636ANarrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodesPOWER INTEGRATIONS INC·Filed 1991·Granted Nov 2, 1993·166 cites·2 claims
- 0894US6768172B2High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2003·Granted Jul 27, 2004·55 cites·14 claims
- 0994US6633065B2High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2001·Granted Oct 14, 2003·59 cites·30 claims
- 1094US5008725APlural polygon source pattern for MOSFETINT RECTIFIER CORP·Filed 1988·Granted Apr 16, 1991·102 cites·14 claims
- 1193US6800903B2High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2001·Granted Oct 5, 2004·54 cites·19 claims
- 1293US6787437B2Method of making a high-voltage transistor with buried conduction regionsPOWER INTEGRATIONS INC·Filed 2002·Granted Sep 7, 2004·57 cites·12 claims
- 1393US5430315ABi-directional power trench MOS field effect transistor having low on-state resistance and low leakage currentFiled 1994·Granted Jul 4, 1995·105 cites·10 claims
- 1491US6600182B2High current field-effect transistorFiled 2001·Granted Jul 29, 2003·66 cites·32 claims
- 1587US5411901AMethod of making high voltage transistorPOWER INTEGRATIONS INC·Filed 1993·Granted May 2, 1995·57 cites·12 claims
- 1687US5072268AMOS gated bipolar transistorPOWER INTEGRATIONS INC·Filed 1991·Granted Dec 10, 1991·71 cites·9 claims
- 1786US5323044ABi-directional MOSFET switchPOWER INTEGRATIONS INC·Filed 1992·Granted Jun 21, 1994·67 cites·10 claims
- 1885US5274259AHigh voltage transistorPOWER INTEGRATIONS INC·Filed 1993·Granted Dec 28, 1993·54 cites·10 claims
- 1982US5130767APlural polygon source pattern for mosfetINT RECTIFIER CORP·Filed 1991·Granted Jul 14, 1992·73 cites·8 claims
- 2047US4220963AFast recovery diode with very thin baseINT RECTIFIER CORP·Filed 1978·Granted Sep 2, 1980·6 cites·7 claims
- 2142US4409607ANormally-on enhancement mode MOSFET with negative threshold gatingXEROX CORP·Filed 1980·Granted Oct 11, 1983·7 cites·1 claims
- 2241US2004217419A1High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2004·Application pending·0 cites
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