Inventor · disambiguated record
Michael Ganz
Also filed as: GANZ MICHAEL · GANZ MICHAEL P
11 granted patents·5 pending applications·13 citations·filing 2011–2017
84Inventor score
Top patents by PatentIndex Score
16 records- 0182US9306036B2Nitride spacer for protecting a fin-shaped field effect transistor (finFET) deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 5, 2016·5 cites·20 claims
- 0272US9812336B2FinFET semiconductor structures and methods of fabricating sameGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 7, 2017·2 cites·3 claims
- 0372US9099525B2Blanket EPI super steep retrograde well formation without Si recessKANG LAEGU·Filed 2012·Granted Aug 4, 2015·4 cites·11 claims
- 0472US8916442B2Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 23, 2014·2 cites·12 claims
- 0557US10483172B2Transistor device structures with retrograde wells in CMOS applicationsGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 19, 2019·0 cites·16 claims
- 0657US9099380B2Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 4, 2015·0 cites·20 claims
- 0753US10096488B2FinFET semiconductor structures and methods of fabricating sameGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 9, 2018·0 cites·14 claims
- 0853US9852954B2Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Dec 26, 2017·0 cites·19 claims
- 0952US9209181B2Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structuresGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 8, 2015·0 cites·10 claims
- 1051US9978588B2Nitride spacer for protecting a fin-shaped field effect transistor (FinFET) deviceGLOBALFOUNDRIES INC·Filed 2016·Granted May 22, 2018·0 cites·18 claims
- 1149US9362357B2Blanket EPI super steep retrograde well formation without Si recessGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·0 cites·20 claims
- 1240US2015097197A1Finfet with sigma cavity with multiple epitaxial material regionsGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 1339US2015214345A1Dopant diffusion barrier to form isolated source/drains in a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 1439US2015076654A1Enlarged fin tip profile for fins of a field effect transistor (finfet) deviceGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 1538US2013230880A1Device and method for analysis of biological specimensPOMMER ANSGAR J·Filed 2011·Application pending·0 cites
- 1638US2014070358A1Method of tailoring silicon trench profile for super steep retrograde well field effect transistorQI YI·Filed 2012·Application pending·0 cites
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