Inventor · disambiguated record
Pilyeon Park
Also filed as: PARK PILYEON
8 granted patents·5 pending applications·165 citations·filing 2013–2022
85Inventor score
Top patents by PatentIndex Score
13 records- 0197US9425041B2Isotropic atomic layer etch for silicon oxides using no activationLAM RES CORP·Filed 2015·Granted Aug 23, 2016·143 cites·18 claims
- 0289US11011388B2Plasma apparatus for high aspect ratio selective lateral etch using cyclic passivation and etchingLAM RES CORP·Filed 2019·Granted May 18, 2021·7 cites·18 claims
- 0384US9870932B1Pressure purge etch method for etching complex 3-D structuresLAM RES CORP·Filed 2016·Granted Jan 16, 2018·4 cites·19 claims
- 0482US9911620B2Method for achieving ultra-high selectivity while etching silicon nitrideLAM RES CORP·Filed 2015·Granted Mar 6, 2018·3 cites·20 claims
- 0581US11469079B2Ultrahigh selective nitride etch to form FinFET devicesLAM RES CORP·Filed 2017·Granted Oct 11, 2022·3 cites·13 claims
- 0680US10679868B2Isotropic atomic layer etch for silicon oxides using no activationLAM RES CORP·Filed 2016·Granted Jun 9, 2020·3 cites·17 claims
- 0769US10276398B2High aspect ratio selective lateral etch using cyclic passivation and etchingLAM RES CORP·Filed 2017·Granted Apr 30, 2019·1 cites·21 claims
- 0866US10192751B2Systems and methods for ultrahigh selective nitride etchLAM RES CORP·Filed 2016·Granted Jan 29, 2019·1 cites·28 claims
- 0966US2023084901A1Ultrahigh selective nitride etch to form finfet devicesLAM RES CORP·Filed 2022·Application pending·0 cites
- 1051US2018158692A1Apparatus for achieving ultra-high selectivity while etching silicon nitrideLAM RES CORP·Filed 2018·Application pending·0 cites
- 1149US2023298859A1Optimizing edge radical flux in a downstream plasma chamberLAM RES CORP·Filed 2021·Application pending·0 cites
- 1244US2016181116A1Selective nitride etchLAM RES CORP·Filed 2014·Application pending·0 cites
- 1340US2013279538A1Thermal Sensor Having a Coupling Layer, and a Thermal Imaging System Including the SameBRIDGE SEMICONDUCTOR CORP·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →