Inventor · disambiguated record
Faisal Yaqoob
Also filed as: YAQOOB FAISAL
6 granted patents·4 pending applications·157 citations·filing 2014–2022
82Inventor score
Top patents by PatentIndex Score
10 records- 0197US9425041B2Isotropic atomic layer etch for silicon oxides using no activationLAM RES CORP·Filed 2015·Granted Aug 23, 2016·143 cites·18 claims
- 0283US10283615B2Ultrahigh selective polysilicon etch with high throughputNOVELLUS SYSTEMS INC·Filed 2015·Granted May 7, 2019·4 cites·15 claims
- 0382US9911620B2Method for achieving ultra-high selectivity while etching silicon nitrideLAM RES CORP·Filed 2015·Granted Mar 6, 2018·3 cites·20 claims
- 0481US11469079B2Ultrahigh selective nitride etch to form FinFET devicesLAM RES CORP·Filed 2017·Granted Oct 11, 2022·3 cites·13 claims
- 0580US10679868B2Isotropic atomic layer etch for silicon oxides using no activationLAM RES CORP·Filed 2016·Granted Jun 9, 2020·3 cites·17 claims
- 0666US10192751B2Systems and methods for ultrahigh selective nitride etchLAM RES CORP·Filed 2016·Granted Jan 29, 2019·1 cites·28 claims
- 0766US2023084901A1Ultrahigh selective nitride etch to form finfet devicesLAM RES CORP·Filed 2022·Application pending·0 cites
- 0852US2019221654A1Ultrahigh selective polysilicon etch with high throughputNOVELLUS SYSTEMS INC·Filed 2019·Application pending·0 cites
- 0951US2018158692A1Apparatus for achieving ultra-high selectivity while etching silicon nitrideLAM RES CORP·Filed 2018·Application pending·0 cites
- 1044US2016181116A1Selective nitride etchLAM RES CORP·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →