Inventor · disambiguated record
Tomoyoshi Kushida
Also filed as: KUSHIDA TOMOYOSHI
18 granted patents·170 citations·filing 1986–2018
94Inventor score
Files withTOYOTA MOTOR CO LTD13TOYODA CHUO KENKYUSHO KK2KUSHIDA TOMOYOSHI1TOYOTA JIDOSHA KABUSHIHI KAISH1YASUE TOMOYOSHI1
Top patents by PatentIndex Score
18 records- 0186US10680091B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2018·Granted Jun 9, 2020·5 cites·20 claims
- 0272US6774407B2Semiconductor device with a suppressed increase in turned-on resistance and an improved turn-off responseTOYOTA MOTOR CO LTD·Filed 2001·Granted Aug 10, 2004·16 cites·11 claims
- 0369US7569914B2Semiconductor devices and method of manufacturing themTOYOTA MOTOR CO LTD·Filed 2007·Granted Aug 4, 2009·3 cites·12 claims
- 0469US6518629B1Semiconductor device and process for producing the deviceTOYOTA MOTOR CO LTD·Filed 2000·Granted Feb 11, 2003·16 cites·14 claims
- 0569US4752818ASemiconductor device with multiple recombination center layersTOYODA CHUO KENKYUSHO KK·Filed 1986·Granted Jun 21, 1988·37 cites·11 claims
- 0658US7507646B2Semiconductor devices and method of manufacturing themTOYOTA MOTOR CO LTD·Filed 2006·Granted Mar 24, 2009·1 cites·9 claims
- 0755US8830114B2Mobile object detecting apparatusYASUE TOMOYOSHI·Filed 2010·Granted Sep 9, 2014·3 cites·12 claims
- 0854US5905294AHigh rated voltage semiconductor device with floating diffusion regionsTOYOTA JIDOSHA KABUSHIHI KAISH·Filed 1997·Granted May 18, 1999·23 cites·19 claims
- 0953US9653621B2Semiconductor apparatusKUSHIDA TOMOYOSHI·Filed 2013·Granted May 16, 2017·1 cites·21 claims
- 1053US6921941B2High withstand voltage field effect semiconductor device with a field dispersion regionTOYOTA MOTOR CO LTD·Filed 2004·Granted Jul 26, 2005·6 cites·17 claims
- 1151US6855983B1Semiconductor device having reduced on resistanceTOYOTA MOTOR CO LTD·Filed 1999·Granted Feb 15, 2005·13 cites·5 claims
- 1247US7038275B2Buried-gate-type semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2003·Granted May 2, 2006·3 cites·20 claims
- 1347US5559346AField-effect semiconductor device with increased breakdown voltageTOYOTA MOTOR CO LTD·Filed 1994·Granted Sep 24, 1996·11 cites·25 claims
- 1445US6200868B1Insulated gate type semiconductor device and process for producing the deviceTOYOTA MOTOR CO LTD·Filed 1998·Granted Mar 13, 2001·9 cites·4 claims
- 1544US5750429ASemiconductor device and manufacture method of the sameTOYOTA MOTOR CO LTD·Filed 1996·Granted May 12, 1998·10 cites·3 claims
- 1643US6930353B2Field-effect-type semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2003·Granted Aug 16, 2005·2 cites·20 claims
- 1741US6034398ASemiconductor device and manufacturing method of the sameTOYOTA MOTOR CO LTD·Filed 1998·Granted Mar 7, 2000·8 cites·3 claims
- 1831US4998149AStatic induction type semiconductor deviceTOYODA CHUO KENKYUSHO KK·Filed 1988·Granted Mar 5, 1991·3 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →