Inventor · disambiguated record
Satoru Nogami
Also filed as: NOGAMI SATORU
32 granted patents·11 pending applications·152 citations·filing 2000–2020
95Inventor score
Top patents by PatentIndex Score
43 records- 0191US9477875B2Cell monitoring device, cell monitoring method and program thereofJAPAN SCIENCE & TECH AGENCY·Filed 2013·Granted Oct 25, 2016·42 cites·8 claims
- 0289US6936102B1SiC material, semiconductor processing equipment and method of preparing SiC material thereforTOYO TANSO CO·Filed 2000·Granted Aug 30, 2005·33 cites·22 claims
- 0388US8248240B2RFID tag and manufacturing method thereofOSAKI NORITSUGU·Filed 2008·Granted Aug 21, 2012·30 cites·4 claims
- 0486US8430324B2RFID tag manufacturing method and RFID tagBABA SHUNJI·Filed 2009·Granted Apr 30, 2013·16 cites·13 claims
- 0583US9644894B2Semiconductor device manufacturing apparatusTOYO TANSO CO·Filed 2014·Granted May 9, 2017·6 cites·9 claims
- 0680US10522386B2Susceptor and method for manufacturing sameTOYO TANSO CO·Filed 2015·Granted Dec 31, 2019·3 cites·11 claims
- 0780US7821398B2RFID tag and method of manufacturing RFID tagFUJITSU LTD·Filed 2008·Granted Oct 26, 2010·3 cites·6 claims
- 0878US7410923B2SiC material, semiconductor device fabricating system and SiC material forming methodTOKYO ELECTRON LTD·Filed 2005·Granted Aug 12, 2008·2 cites·17 claims
- 0977US9725822B2Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorphTORIMI SATOSHI·Filed 2011·Granted Aug 8, 2017·1 cites·17 claims
- 1076US10358741B2Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbideTORIMI SATOSHI·Filed 2011·Granted Jul 23, 2019·1 cites·8 claims
- 1169US8528826B2Wireless tag and manufacturing methodBABA SHUNJI·Filed 2011·Granted Sep 10, 2013·2 cites·2 claims
- 1266US8002195B2Radio-frequency identification tagFUJITSU LTD·Filed 2009·Granted Aug 23, 2011·2 cites·5 claims
- 1365US10014176B2SiC substrate treatment methodTOYO TANSO CO·Filed 2015·Granted Jul 3, 2018·1 cites·12 claims
- 1464US8286888B2Radio-frequency identification tagBABA SHUNJI·Filed 2011·Granted Oct 16, 2012·1 cites·5 claims
- 1563US9704733B2Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatusTOYO TANSO CO·Filed 2013·Granted Jul 11, 2017·1 cites·7 claims
- 1663US9570306B2Surface treatment method for single crystal SiC substrate, and single crystal SiC substrateTOYO TANSO CO·Filed 2013·Granted Feb 14, 2017·1 cites·12 claims
- 1762US10388536B2Etching method for SiC substrate and holding containerTOYO TANSO CO·Filed 2015·Granted Aug 20, 2019·1 cites·2 claims
- 1862US9991175B2Method for estimating depth of latent scratches in SiC substratesTOYO TANSO CO·Filed 2015·Granted Jun 5, 2018·1 cites·8 claims
- 1962US7517516B2High purity carbonaceous material and ceramic coated high purity carbonaceous materialTOYO TANSO CO·Filed 2004·Granted Apr 14, 2009·4 cites·11 claims
- 2060US8009049B2RFID tag and method of manufacturing RFID tagFUJITSU LTD·Filed 2010·Granted Aug 30, 2011·0 cites·7 claims
- 2154US8537052B2Antenna and electronic device equipped with the sameFURUTANI NAGAHISA·Filed 2010·Granted Sep 17, 2013·1 cites·2 claims
- 2252US12139813B2SiC wafer and manufacturing method for SiC waferTOYOTA TSUSHO CORP·Filed 2019·Granted Nov 12, 2024·0 cites·4 claims
- 2352US9447517B2Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline siliconTORIMI SATOSHI·Filed 2011·Granted Sep 20, 2016·0 cites·12 claims
- 2451US2010123586A1Rfid tag and manufacturing method of rfid tagFUJITSU LTD·Filed 2009·Application pending·0 cites
- 2549US2009091455A1Rfid tagFUJITSU LTD·Filed 2008·Application pending·0 cites
- 2648US10665465B2Surface treatment method for SiC substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2015·Granted May 26, 2020·0 cites·16 claims
- 2747US8763911B2RFID tagBABA SHUNJI·Filed 2012·Granted Jul 1, 2014·0 cites·19 claims
- 2847US2018069084A1METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFERTOYO TANSO CO·Filed 2017·Application pending·0 cites
- 2945US11261539B2Method for manufacturing reformed sic wafer, epitaxial layer-attached sic wafer, method for manufacturing same, and surface treatment methodTOYO TANSO CO·Filed 2018·Granted Mar 1, 2022·0 cites·12 claims
- 3045US8453938B2Radio tag and method for manufacturing radio tagBABA SHUNJI·Filed 2011·Granted Jun 4, 2013·0 cites·14 claims
- 3145US8424771B2RFID tagBABA SHUNJI·Filed 2010·Granted Apr 23, 2013·0 cites·16 claims
- 3245US2022376109A1Semiconductor device and method for manufacturing sameHITACHI LTD·Filed 2020·Application pending·0 cites
- 3345US2017236905A1METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFERTOYO TANSO CO·Filed 2016·Application pending·0 cites
- 3443US2021375613A1SiC WAFER MANUFACTURING METHODTOYO TANSO CO·Filed 2019·Application pending·0 cites
- 3542US10665485B2Heat treatment vessel for single-crystal silicon carbide substrate and etching methodTOYO TANSO CO·Filed 2016·Granted May 26, 2020·0 cites·15 claims
- 3642US8471710B2Wireless tag and method of producing wireless tagBABA SHUNJI·Filed 2010·Granted Jun 25, 2013·0 cites·16 claims
- 3741US2022002905A1Method for manufacturing device fabrication waferTOYO TANSO CO·Filed 2019·Application pending·0 cites
- 3840US9029219B2Semiconductor wafer manufacturing method, and semiconductor waferKANEKO TADAAKI·Filed 2012·Granted May 12, 2015·0 cites·7 claims
- 3940US2011068904A1Rfid tagFUJITSU LTD·Filed 2010·Application pending·0 cites
- 4039US2021040643A1Susceptor, method for producing epitaxial substrate, and epitaxial substrateTOYO TANSO CO·Filed 2018·Application pending·0 cites
- 4138US9252206B2Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbideTORIMI SATOSHI·Filed 2011·Granted Feb 2, 2016·0 cites·22 claims
- 4231US2017114475A1METHOD FOR REMOVING WORK-AFFECTED LAYER ON SiC SEED CRYSTAL, SiC SEED CRYSTAL, AND SiC SUBSTRATE MANUFACTURING METHODTOYO TANSO CO·Filed 2015·Application pending·0 cites
- 4331US2017121848A1SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEMICONDUCTOR PRODUCTION METHODTOYO TANSO CO·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →