Inventor · disambiguated record
Satoshi Torimi
Also filed as: TORIMI SATOSHI
14 granted patents·5 pending applications·13 citations·filing 2011–2019
86Inventor score
Top patents by PatentIndex Score
19 records- 0183US9644894B2Semiconductor device manufacturing apparatusTOYO TANSO CO·Filed 2014·Granted May 9, 2017·6 cites·9 claims
- 0277US9725822B2Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorphTORIMI SATOSHI·Filed 2011·Granted Aug 8, 2017·1 cites·17 claims
- 0376US10358741B2Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbideTORIMI SATOSHI·Filed 2011·Granted Jul 23, 2019·1 cites·8 claims
- 0465US10014176B2SiC substrate treatment methodTOYO TANSO CO·Filed 2015·Granted Jul 3, 2018·1 cites·12 claims
- 0563US9704733B2Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatusTOYO TANSO CO·Filed 2013·Granted Jul 11, 2017·1 cites·7 claims
- 0663US9570306B2Surface treatment method for single crystal SiC substrate, and single crystal SiC substrateTOYO TANSO CO·Filed 2013·Granted Feb 14, 2017·1 cites·12 claims
- 0762US10388536B2Etching method for SiC substrate and holding containerTOYO TANSO CO·Filed 2015·Granted Aug 20, 2019·1 cites·2 claims
- 0862US9991175B2Method for estimating depth of latent scratches in SiC substratesTOYO TANSO CO·Filed 2015·Granted Jun 5, 2018·1 cites·8 claims
- 0952US12139813B2SiC wafer and manufacturing method for SiC waferTOYOTA TSUSHO CORP·Filed 2019·Granted Nov 12, 2024·0 cites·4 claims
- 1052US9447517B2Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline siliconTORIMI SATOSHI·Filed 2011·Granted Sep 20, 2016·0 cites·12 claims
- 1148US10665465B2Surface treatment method for SiC substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2015·Granted May 26, 2020·0 cites·16 claims
- 1247US2018069084A1METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFERTOYO TANSO CO·Filed 2017·Application pending·0 cites
- 1345US11261539B2Method for manufacturing reformed sic wafer, epitaxial layer-attached sic wafer, method for manufacturing same, and surface treatment methodTOYO TANSO CO·Filed 2018·Granted Mar 1, 2022·0 cites·12 claims
- 1445US2017236905A1METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFERTOYO TANSO CO·Filed 2016·Application pending·0 cites
- 1543US2019010629A1METHOD FOR MANUFACTURING SINGLE-CRYSTAL SiC, AND HOUSING CONTAINERTOYO TANSO CO·Filed 2016·Application pending·0 cites
- 1642US10665485B2Heat treatment vessel for single-crystal silicon carbide substrate and etching methodTOYO TANSO CO·Filed 2016·Granted May 26, 2020·0 cites·15 claims
- 1738US9252206B2Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbideTORIMI SATOSHI·Filed 2011·Granted Feb 2, 2016·0 cites·22 claims
- 1831US2017114475A1METHOD FOR REMOVING WORK-AFFECTED LAYER ON SiC SEED CRYSTAL, SiC SEED CRYSTAL, AND SiC SUBSTRATE MANUFACTURING METHODTOYO TANSO CO·Filed 2015·Application pending·0 cites
- 1931US2017121848A1SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEMICONDUCTOR PRODUCTION METHODTOYO TANSO CO·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →