Inventor · disambiguated record
Narishi Gonohe
Also filed as: GONOHE NARISHI
7 granted patents·6 pending applications·23 citations·filing 2003–2008
76Inventor score
Top patents by PatentIndex Score
13 records- 0188US7338900B2Method for forming tungsten nitride filmULVAC INC·Filed 2005·Granted Mar 4, 2008·20 cites·12 claims
- 0262US8158197B2Method for forming tantalum nitride filmGONOHE NARISHI·Filed 2006·Granted Apr 17, 2012·2 cites·9 claims
- 0360US7790590B2Selective W-CVD method and method for forming multi-layered Cu electrical interconnectionULVAC INC·Filed 2006·Granted Sep 7, 2010·1 cites·18 claims
- 0451US2009095617A1Bias sputtering film forming process and bias sputtering film forming apparatusULVAC INC·Filed 2008·Application pending·0 cites
- 0548US8105468B2Method for forming tantalum nitride filmGONOHE NARISHI·Filed 2006·Granted Jan 31, 2012·0 cites·13 claims
- 0648US2009232984A1Apparatus and Method of Film FormationGONOHE NARISHI·Filed 2006·Application pending·0 cites
- 0747US8216642B2Method of manufacturing filmHARADA MASAMICHI·Filed 2007·Granted Jul 10, 2012·0 cites·14 claims
- 0841US2005118810A1Method of cleaning surface of semiconductor substrate, method of manufacturing thin film, method of manufacturing semiconductor device, and semiconductor deviceULVAC INC·Filed 2004·Application pending·0 cites
- 0939US8796142B2Method for forming tantalum nitride filmGONOHE NARISHI·Filed 2006·Granted Aug 5, 2014·0 cites·7 claims
- 1039US8158198B2Method for forming tantalum nitride filmGONOHE NARISHI·Filed 2006·Granted Apr 17, 2012·0 cites·13 claims
- 1139US2004050687A1Bias sputtering film forming process and bias sputtering film forming apparatusULVAC INC·Filed 2003·Application pending·0 cites
- 1238US2009162565A1Method for Forming Tantalum Nitride FilmGONOHE NARISHI·Filed 2006·Application pending·0 cites
- 1338US2008199601A1Method for Forming Tantalum Nitride FilmGONOHE NARISHI·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →