Inventor · disambiguated record
Yohei Enya
Also filed as: ENYA YOHEI
66 granted patents·15 pending applications·252 citations·filing 2009–2021
98Inventor score
Top patents by PatentIndex Score
81 records- 0199US10892596B2Optical moduleSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Jan 12, 2021·78 cites·6 claims
- 0297US7933303B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Apr 26, 2011·30 cites·20 claims
- 0394US8227277B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Jul 24, 2012·15 cites·9 claims
- 0492US8306082B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2010·Granted Nov 6, 2012·12 cites·16 claims
- 0592US8304793B2III-nitride semiconductor optical device and epitaxial substrateYOSHIZUMI YUSUKE·Filed 2010·Granted Nov 6, 2012·13 cites·22 claims
- 0692US7873088B2Group III nitride semiconductor element and epitaxial waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Jan 18, 2011·11 cites·21 claims
- 0792US7851821B2Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Dec 14, 2010·9 cites·29 claims
- 0888US7858963B2Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Dec 28, 2010·6 cites·11 claims
- 0987US10601200B2Optical moduleSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Mar 24, 2020·4 cites·12 claims
- 1087US8546163B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Oct 1, 2013·6 cites·10 claims
- 1186US8741674B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Jun 3, 2014·6 cites·10 claims
- 1284US8718110B2Nitride semiconductor laser and epitaxial substrateKYONO TAKASHI·Filed 2012·Granted May 6, 2014·6 cites·21 claims
- 1384US8053806B2Group III nitride semiconductor device and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Nov 8, 2011·4 cites·24 claims
- 1481US8048702B2Method of fabricating nitride-based semiconductor optical deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Nov 1, 2011·5 cites·19 claims
- 1580US8507305B2Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrateYOSHIZUMI YUSUKE·Filed 2012·Granted Aug 13, 2013·4 cites·16 claims
- 1678US8927962B2Group III nitride semiconductor optical deviceUENO MASAKI·Filed 2010·Granted Jan 6, 2015·4 cites·18 claims
- 1777US9977201B2Optical module that suppresses stray lightSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted May 22, 2018·2 cites·7 claims
- 1875US11616337B2Optical moduleSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Granted Mar 28, 2023·0 cites·4 claims
- 1975US8513684B2Nitride semiconductor light emitting deviceKYONO TAKASHI·Filed 2011·Granted Aug 20, 2013·3 cites·20 claims
- 2075US8207556B2Group III nitride semiconductor device and epitaxial substrateKYONO TAKASHI·Filed 2011·Granted Jun 26, 2012·2 cites·28 claims
- 2175US7851243B1Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Dec 14, 2010·2 cites·1 claims
- 2274US9806494B2Optical module and method for manufacturing the optical moduleSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Oct 31, 2017·2 cites·13 claims
- 2374US8488642B2Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diodeYOSHIZUMI YUSUKE·Filed 2011·Granted Jul 16, 2013·3 cites·30 claims
- 2474US8476615B2GaN-based semiconductor light emitting device and the method for making the sameENYA YOHEI·Filed 2011·Granted Jul 2, 2013·3 cites·18 claims
- 2574US8107507B2Group III nitride semiconductor element and epitaxial waferYOSHIZUMI YUSUKE·Filed 2010·Granted Jan 31, 2012·2 cites·23 claims
- 2673US8803274B2Nitride-based semiconductor light-emitting elementKYONO TAKASHI·Filed 2010·Granted Aug 12, 2014·3 cites·10 claims
- 2770US8357946B2Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Granted Jan 22, 2013·2 cites·39 claims
- 2870US8207544B2Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor deviceENYA YOHEI·Filed 2010·Granted Jun 26, 2012·2 cites·24 claims
- 2968US10333270B2Optical module and method for manufacturing the optical moduleSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Jun 25, 2019·1 cites·12 claims
- 3068US8483251B2Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diodeENYA YOHEI·Filed 2011·Granted Jul 9, 2013·2 cites·24 claims
- 3168US8067257B2Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting deviceUENO MASAKI·Filed 2010·Granted Nov 29, 2011·1 cites·19 claims
- 3265US8953656B2III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser deviceKYONO TAKASHI·Filed 2012·Granted Feb 10, 2015·1 cites·15 claims
- 3364US9379523B2Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Jun 28, 2016·1 cites·18 claims
- 3463US7955881B2Method of fabricating quantum well structureSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jun 7, 2011·1 cites·8 claims
- 3562US9231375B2Semiconductor deviceSONY CORP·Filed 2013·Granted Jan 5, 2016·1 cites·6 claims
- 3661US8809868B2Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrateENYA YOHEI·Filed 2011·Granted Aug 19, 2014·1 cites·22 claims
- 3761US8183071B2Method for producing nitride semiconductor optical device and epitaxial waferAKITA KATSUSHI·Filed 2009·Granted May 22, 2012·1 cites·20 claims
- 3860US8148716B2Group III nitride semiconductor optical device, epitaxial substrate, and method of making group III nitride semiconductor light-emitting deviceUENO MASAKI·Filed 2010·Granted Apr 3, 2012·1 cites·20 claims
- 3959US11245245B2Optical moduleSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Feb 8, 2022·0 cites·5 claims
- 4059US8548021B2III-nitride semiconductor laser, and method for fabricating III-nitride semiconductor laserFUJII KEI·Filed 2011·Granted Oct 1, 2013·1 cites·19 claims
- 4158US9231370B2Group III nitride semiconductor light emitting deviceSUMITOMO TAKAMICHI·Filed 2012·Granted Jan 5, 2016·1 cites·20 claims
- 4256US12184034B2Laser moduleSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Dec 31, 2024·0 cites·18 claims
- 4355US12222493B2Optical moduleSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Feb 11, 2025·0 cites·10 claims
- 4454US8304269B2Method of fabricating group III nitride semiconductor deviceKYONO TAKASHI·Filed 2011·Granted Nov 6, 2012·0 cites·14 claims
- 4553US8391327B2Group III nitride semiconductor element and epitaxial waferYOSHIZUMI YUSUKE·Filed 2012·Granted Mar 5, 2013·0 cites·23 claims
- 4653US2012080659A1Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting deviceUENO MASAKI·Filed 2011·Application pending·0 cites
- 4752US8693515B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Apr 8, 2014·0 cites·16 claims
- 4851US8541253B2III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2012·Granted Sep 24, 2013·0 cites·11 claims
- 4950US8487327B2Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor deviceENYA YOHEI·Filed 2012·Granted Jul 16, 2013·0 cites·25 claims
- 5050US2012184057A1Iii-nitride semiconductor laser device, and method of fabricating the iii-nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2012·Application pending·0 cites
Showing the top 50 of 81 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →