Inventor · disambiguated record
Takatoshi Ikegami
Also filed as: IKEGAMI TAKATOSHI
30 granted patents·5 pending applications·309 citations·filing 1993–2017
97Inventor score
Files withYOSHIZUMI YUSUKE11SUMITOMO ELECTRIC INDUSTRIES10TAKAGI SHIMPEI9SANYO ELECTRIC CO4ADACHI MASAHIRO1
Top patents by PatentIndex Score
35 records- 0197US7933303B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Apr 26, 2011·30 cites·20 claims
- 0296US8076167B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2010·Granted Dec 13, 2011·22 cites·7 claims
- 0395US8105857B2Method of fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2010·Granted Jan 31, 2012·25 cites·19 claims
- 0495US8071405B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2010·Granted Dec 6, 2011·20 cites·2 claims
- 0594US8227277B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Jul 24, 2012·15 cites·9 claims
- 0693US8389312B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2012·Granted Mar 5, 2013·13 cites·8 claims
- 0793US8265113B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2010·Granted Sep 11, 2012·14 cites·18 claims
- 0893US8175129B2Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe grooveYOSHIZUMI YUSUKE·Filed 2010·Granted May 8, 2012·14 cites·23 claims
- 0993US8139619B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2011·Granted Mar 20, 2012·13 cites·11 claims
- 1092US8401048B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2010·Granted Mar 19, 2013·12 cites·19 claims
- 1192US8306082B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2010·Granted Nov 6, 2012·12 cites·16 claims
- 1292US8213475B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2011·Granted Jul 3, 2012·12 cites·15 claims
- 1390US8361885B2Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe grooveSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Granted Jan 29, 2013·9 cites·13 claims
- 1487US8546163B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Oct 1, 2013·6 cites·10 claims
- 1586US8741674B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Jun 3, 2014·6 cites·10 claims
- 1685US8420419B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2012·Granted Apr 16, 2013·5 cites·11 claims
- 1781US5416790ASemiconductor laser with a self-sustained pulsationSANYO ELECTRIC CO·Filed 1993·Granted May 16, 1995·34 cites·10 claims
- 1880US8507305B2Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrateYOSHIZUMI YUSUKE·Filed 2012·Granted Aug 13, 2013·4 cites·16 claims
- 1974US9806494B2Optical module and method for manufacturing the optical moduleSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Oct 31, 2017·2 cites·13 claims
- 2068US10333270B2Optical module and method for manufacturing the optical moduleSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Jun 25, 2019·1 cites·12 claims
- 2165US8772064B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2011·Granted Jul 8, 2014·1 cites·12 claims
- 2259US5506170AMethod of making a semiconductor laser with a self-sustained pulsationSANYO ELECTRIC CO·Filed 1994·Granted Apr 9, 1996·14 cites·10 claims
- 2356US8929416B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Jan 6, 2015·0 cites·10 claims
- 2455US5610096ASemiconductor laser with a self sustained pulsationSANYO ELECTRIC CO·Filed 1995·Granted Mar 11, 1997·16 cites·11 claims
- 2552US8693515B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Apr 8, 2014·0 cites·16 claims
- 2651US8541253B2III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2012·Granted Sep 24, 2013·0 cites·11 claims
- 2750US8594145B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceTAKAGI SHIMPEI·Filed 2010·Granted Nov 26, 2013·0 cites·10 claims
- 2850US2012184057A1Iii-nitride semiconductor laser device, and method of fabricating the iii-nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2012·Application pending·0 cites
- 2948US8908732B2Group-III nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Dec 9, 2014·0 cites·19 claims
- 3048US2011075695A1Iii-intride semiconductor laser device, and method of fabricating the iii-nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 3148US2011075694A1III-Nitride semiconductor laser device, and method of fabricating the III-Nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 3248US2011228804A1Group-iii nitride semiconductor laser device, and method for fabricating group-iii nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 3347US2011158277A1Group-iii nitride semiconductor laser device, method of fabricating group-iii nitride semiconductor laser device, and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 3444US5586136ASemiconductor laser device with a misoriented substrateSANYO ELECTRIC CO·Filed 1994·Granted Dec 17, 1996·9 cites·30 claims
- 3536US8917750B2III-nitride semiconductor laser diodeADACHI MASAHIRO·Filed 2011·Granted Dec 23, 2014·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →