Inventor · disambiguated record
Takashi Kyono
Also filed as: KYONO TAKASHI
86 granted patents·24 pending applications·768 citations·filing 2004–2021
99Inventor score
Top patents by PatentIndex Score
110 records- 0199US7968864B2Group-III nitride light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jun 28, 2011·254 cites·11 claims
- 0299US7939354B2Method of fabricating nitride semiconductor laserSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted May 10, 2011·241 cites·21 claims
- 0398US7816238B2GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Oct 19, 2010·43 cites·8 claims
- 0497US7933303B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Apr 26, 2011·30 cites·20 claims
- 0594US8227277B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Jul 24, 2012·15 cites·9 claims
- 0692US8306082B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2010·Granted Nov 6, 2012·12 cites·16 claims
- 0792US8304793B2III-nitride semiconductor optical device and epitaxial substrateYOSHIZUMI YUSUKE·Filed 2010·Granted Nov 6, 2012·13 cites·22 claims
- 0892US7851821B2Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Dec 14, 2010·9 cites·29 claims
- 0991US9123843B2Semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Sep 1, 2015·8 cites·10 claims
- 1091US6998284B2Semiconductor device having quantum well structure, and method of forming the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Feb 14, 2006·20 cites·23 claims
- 1188US7858963B2Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Dec 28, 2010·6 cites·11 claims
- 1287US8546163B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Oct 1, 2013·6 cites·10 claims
- 1386US9281427B2Semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Mar 8, 2016·3 cites·13 claims
- 1486US8741674B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Jun 3, 2014·6 cites·10 claims
- 1584US9773932B2Epitaxial wafer and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Sep 26, 2017·6 cites·11 claims
- 1684US8718110B2Nitride semiconductor laser and epitaxial substrateKYONO TAKASHI·Filed 2012·Granted May 6, 2014·6 cites·21 claims
- 1784US8053806B2Group III nitride semiconductor device and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Nov 8, 2011·4 cites·24 claims
- 1884US7781314B2Nitride semiconductor device manufacturing methodSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Aug 24, 2010·7 cites·2 claims
- 1983US9608148B2Semiconductor element and method for producing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Mar 28, 2017·3 cites·6 claims
- 2081US8048702B2Method of fabricating nitride-based semiconductor optical deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Nov 1, 2011·5 cites·19 claims
- 2180US8507305B2Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrateYOSHIZUMI YUSUKE·Filed 2012·Granted Aug 13, 2013·4 cites·16 claims
- 2278US8927962B2Group III nitride semiconductor optical deviceUENO MASAKI·Filed 2010·Granted Jan 6, 2015·4 cites·18 claims
- 2375US11616337B2Optical moduleSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Granted Mar 28, 2023·0 cites·4 claims
- 2475US8513684B2Nitride semiconductor light emitting deviceKYONO TAKASHI·Filed 2011·Granted Aug 20, 2013·3 cites·20 claims
- 2575US8207556B2Group III nitride semiconductor device and epitaxial substrateKYONO TAKASHI·Filed 2011·Granted Jun 26, 2012·2 cites·28 claims
- 2675US7851243B1Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Dec 14, 2010·2 cites·1 claims
- 2774US9806494B2Optical module and method for manufacturing the optical moduleSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Oct 31, 2017·2 cites·13 claims
- 2874US8488642B2Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diodeYOSHIZUMI YUSUKE·Filed 2011·Granted Jul 16, 2013·3 cites·30 claims
- 2974US8476615B2GaN-based semiconductor light emitting device and the method for making the sameENYA YOHEI·Filed 2011·Granted Jul 2, 2013·3 cites·18 claims
- 3074US7884351B2Nitride semiconductor light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Feb 8, 2011·5 cites·6 claims
- 3173US8803274B2Nitride-based semiconductor light-emitting elementKYONO TAKASHI·Filed 2010·Granted Aug 12, 2014·3 cites·10 claims
- 3273US7576351B2Nitride semiconductor light generating deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Aug 18, 2009·5 cites·5 claims
- 3372US7547910B2Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Jun 16, 2009·4 cites·6 claims
- 3470US9425348B2Group III nitride semiconductor device, and method for fabricating group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Aug 23, 2016·1 cites·13 claims
- 3570US8357946B2Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Granted Jan 22, 2013·2 cites·39 claims
- 3670US8207544B2Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor deviceENYA YOHEI·Filed 2010·Granted Jun 26, 2012·2 cites·24 claims
- 3768US10333270B2Optical module and method for manufacturing the optical moduleSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Jun 25, 2019·1 cites·12 claims
- 3868US8483251B2Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diodeENYA YOHEI·Filed 2011·Granted Jul 9, 2013·2 cites·24 claims
- 3968US8067257B2Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting deviceUENO MASAKI·Filed 2010·Granted Nov 29, 2011·1 cites·19 claims
- 4066US8884306B2Semiconductor device and method for manufacturing the sameKYONO TAKASHI·Filed 2012·Granted Nov 11, 2014·1 cites·2 claims
- 4165US8953656B2III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser deviceKYONO TAKASHI·Filed 2012·Granted Feb 10, 2015·1 cites·15 claims
- 4265US7973322B2Nitride semiconductor light emitting device and method for forming the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Jul 5, 2011·2 cites·12 claims
- 4365US7949026B2Group III nitride semiconductor laserSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted May 24, 2011·2 cites·20 claims
- 4464US9887310B2Semiconductor layered structure, method for producing semiconductor layered structure, and method for producing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Feb 6, 2018·1 cites·10 claims
- 4564US9379523B2Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Jun 28, 2016·1 cites·18 claims
- 4664US8071986B2Nitride semiconductor light-emitting elementKYONO TAKASHI·Filed 2006·Granted Dec 6, 2011·2 cites·4 claims
- 4763US7955881B2Method of fabricating quantum well structureSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jun 7, 2011·1 cites·8 claims
- 4862US9231375B2Semiconductor deviceSONY CORP·Filed 2013·Granted Jan 5, 2016·1 cites·6 claims
- 4961US8809868B2Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrateENYA YOHEI·Filed 2011·Granted Aug 19, 2014·1 cites·22 claims
- 5061US8183071B2Method for producing nitride semiconductor optical device and epitaxial waferAKITA KATSUSHI·Filed 2009·Granted May 22, 2012·1 cites·20 claims
Showing the top 50 of 110 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →