Inventor · disambiguated record
Wang-Chul Shin
Also filed as: SHIN WANG-CHUL
9 granted patents·1 pending application·422 citations·filing 1997–2024
91Inventor score
Top patents by PatentIndex Score
10 records- 0195US5936887ANon-volatile memory device with NAND type cell structureSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Aug 10, 1999·141 cites·14 claims
- 0294US6028788AFlash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Feb 22, 2000·150 cites·12 claims
- 0384US6781193B2Non-volatile memory device having floating trap type memory cell and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 24, 2004·31 cites·27 claims
- 0479US6927447B2Flash memory devices having a sloped trench isolation structureSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 9, 2005·20 cites·16 claims
- 0575US7391082B2Semiconductor integrated circuit having resistorSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·6 cites·14 claims
- 0674US6204122B1Methods of forming nonvolatile integrated circuit memory devices having high capacitive coupling ratiosSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Mar 20, 2001·36 cites·8 claims
- 0771US7494868B2Methods of fabricating flash memory devices having a sloped trench isolation structureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 24, 2009·4 cites·12 claims
- 0867US2025048616A1Semiconductor device, three-dimensional memory device and manufacturing methods thereofSK HYNIX INC·Filed 2024·Application pending·0 cites
- 0965US6180457B1Method of manufacturing non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 30, 2001·28 cites·11 claims
- 1056US7084030B2Method of forming a non-volatile memory device having floating trap type memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 1, 2006·6 cites·23 claims
Join the waitlist — get patent alerts
Get an alert when Wang-Chul Shin files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →