Inventor · disambiguated record
Tadahiro Ishizaka
Also filed as: ISHIZAKA TADAHIRO
68 granted patents·51 pending applications·1,943 citations·filing 2001–2024
98Inventor score
Top patents by PatentIndex Score
119 records- 0199US7645484B2Method of forming a metal carbide or metal carbonitride film having improved adhesionTOKYO ELECTRON LTD·Filed 2006·Granted Jan 12, 2010·527 cites·25 claims
- 0299US7422636B2Plasma enhanced atomic layer deposition system having reduced contaminationTOKYO ELECTRON LTD·Filed 2005·Granted Sep 9, 2008·466 cites·21 claims
- 0398US8974868B2Post deposition plasma cleaning system and methodISHIZAKA TADAHIRO·Filed 2005·Granted Mar 10, 2015·466 cites·24 claims
- 0498US7959985B2Method of integrating PEALD Ta-containing films into Cu metallizationTOKYO ELECTRON LTD·Filed 2006·Granted Jun 14, 2011·61 cites·34 claims
- 0598US7314835B2Plasma enhanced atomic layer deposition system and methodTOKYO ELECTRON LTD·Filed 2005·Granted Jan 1, 2008·91 cites·20 claims
- 0695US10483100B2Method for forming TiON filmTOKYO ELECTRON LTD·Filed 2016·Granted Nov 19, 2019·42 cites·18 claims
- 0795US7651568B2Plasma enhanced atomic layer deposition systemTOKYO ELECTRON LTD·Filed 2005·Granted Jan 26, 2010·26 cites·20 claims
- 0895US7407876B2Method of plasma enhanced atomic layer deposition of TaC and TaCN films having good adhesion to copperTOKYO ELECTRON LTD·Filed 2006·Granted Aug 5, 2008·33 cites·27 claims
- 0993US7338901B2Method of preparing a film layer-by-layer using plasma enhanced atomic layer depositionTOKYO ELECTRON LTD·Filed 2005·Granted Mar 4, 2008·24 cites·26 claims
- 1092US7332426B2Substrate processing method and fabrication process of a semiconductor deviceTOKYO ELECTRON LTD·Filed 2005·Granted Feb 19, 2008·18 cites·26 claims
- 1190US7708835B2Film precursor tray for use in a film precursor evaporation system and method of usingTOKYO ELECTRON LTD·Filed 2006·Granted May 4, 2010·12 cites·26 claims
- 1288US7717061B2Gas switching mechanism for plasma processing apparatusTOKYO ELECTRON LTD·Filed 2005·Granted May 18, 2010·20 cites·9 claims
- 1387US8399353B2Methods of forming copper wiring and copper film, and film forming systemISHIZAKA TADAHIRO·Filed 2011·Granted Mar 19, 2013·9 cites·13 claims
- 1487US6991684B2Heat-treating apparatus and heat-treating methodTOKYO ELECTRON LTD·Filed 2001·Granted Jan 31, 2006·42 cites·5 claims
- 1586US8242019B2Selective deposition of metal-containing cap layers for semiconductor devicesISHIZAKA TADAHIRO·Filed 2009·Granted Aug 14, 2012·12 cites·9 claims
- 1685US11152260B2Embedding method and processing systemTOKYO ELECTRON LTD·Filed 2019·Granted Oct 19, 2021·3 cites·5 claims
- 1785US8058728B2Diffusion barrier and adhesion layer for an interconnect structureISHIZAKA TADAHIRO·Filed 2008·Granted Nov 15, 2011·13 cites·13 claims
- 1884US7846841B2Method for forming cobalt nitride cap layersTOKYO ELECTRON LTD·Filed 2008·Granted Dec 7, 2010·9 cites·20 claims
- 1980US9101067B2Method for forming copper wiringTOKYO ELECTRON LTD·Filed 2013·Granted Aug 4, 2015·4 cites·14 claims
- 2080US7727883B2Method of forming a diffusion barrier and adhesion layer for an interconnect structureTOKYO ELECTRON LTD·Filed 2008·Granted Jun 1, 2010·8 cites·22 claims
- 2179US7592257B2Semiconductor contact structure containing an oxidation-resistant diffusion barrier and method of formingTOKYO ELECTRON LTD·Filed 2007·Granted Sep 22, 2009·6 cites·18 claims
- 2276US9540733B2Film forming method, film forming apparatus and recording mediumTOKYO ELECTRON LTD·Filed 2015·Granted Jan 10, 2017·2 cites·8 claims
- 2376US7491430B2Deposition method for forming a film including metal, nitrogen and carbonTOKYO ELECTRON LTD·Filed 2005·Granted Feb 17, 2009·5 cites·13 claims
- 2475US8372739B2Diffusion barrier for integrated circuits formed from a layer of reactive metal and method of fabricationTOKYO ELECTRON LTD·Filed 2007·Granted Feb 12, 2013·8 cites·27 claims
- 2575US7977235B2Method for manufacturing a semiconductor device with metal-containing cap layersTOKYO ELECTRON LTD·Filed 2009·Granted Jul 12, 2011·4 cites·19 claims
- 2674US9607888B2Integration of ALD barrier layer and CVD Ru liner for void-free Cu fillingTOKYO ELECTRON LTD·Filed 2015·Granted Mar 28, 2017·2 cites·20 claims
- 2774US7799681B2Method for forming a ruthenium metal cap layerTOKYO ELECTRON LTD·Filed 2008·Granted Sep 21, 2010·4 cites·24 claims
- 2873US12227841B2Ruthenium film forming method and substrate processing systemTOKYO ELECTRON LTD·Filed 2023·Granted Feb 18, 2025·0 cites·8 claims
- 2973US11387112B2Surface processing method and processing systemTOKYO ELECTRON LTD·Filed 2019·Granted Jul 12, 2022·1 cites·11 claims
- 3073US10056328B2Ruthenium metal feature fill for interconnectsTOKYO ELECTRON LTD·Filed 2017·Granted Aug 21, 2018·1 cites·19 claims
- 3173US8859422B2Method of forming copper wiring and method and system for forming copper filmISHIZAKA TADAHIRO·Filed 2012·Granted Oct 14, 2014·3 cites·26 claims
- 3272US9425093B2Copper wiring forming method, film forming system, and storage mediumTOKYO ELECTRON LTD·Filed 2014·Granted Aug 23, 2016·2 cites·11 claims
- 3372US9368418B2Copper wiring structure forming methodTOKYO ELECTRON LTD·Filed 2014·Granted Jun 14, 2016·2 cites·18 claims
- 3471US9576850B2Method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2013·Granted Feb 21, 2017·2 cites·7 claims
- 3570US9711449B2Ruthenium metal feature fill for interconnectsTOKYO ELECTRON LTD·Filed 2016·Granted Jul 18, 2017·1 cites·20 claims
- 3668US7772111B2Substrate processing method and fabrication process of a semiconductor deviceTOKYO ELECTRON LTD·Filed 2007·Granted Aug 10, 2010·2 cites·12 claims
- 3766US8026168B2Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of formingTOKYO ELECTRON LTD·Filed 2007·Granted Sep 27, 2011·2 cites·8 claims
- 3866US7829158B2Method for depositing a barrier layer on a low dielectric constant materialTOKYO ELECTRON LTD·Filed 2007·Granted Nov 9, 2010·2 cites·5 claims
- 3966US7727912B2Method of light enhanced atomic layer depositionTOKYO ELECTRON LTD·Filed 2006·Granted Jun 1, 2010·2 cites·30 claims
- 4066US7718527B2Method for forming cobalt tungsten cap layersTOKYO ELECTRON LTD·Filed 2008·Granted May 18, 2010·2 cites·27 claims
- 4164US12416075B2Film-forming method and film-forming systemTOKYO ELECTRON LTD·Filed 2022·Granted Sep 16, 2025·0 cites·4 claims
- 4264US12404582B2Method and apparatus for embedding ruthenium in recess formed on substrate surfaceTOKYO ELECTRON LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 4363US9406558B2Cu wiring fabrication method and storage mediumTOKYO ELECTRON LTD·Filed 2015·Granted Aug 2, 2016·1 cites·8 claims
- 4462US9362166B2Method of forming copper wiringTOKYO ELECTRON LTD·Filed 2015·Granted Jun 7, 2016·1 cites·6 claims
- 4562US2024363405A1Substrate Processing Method, Apparatus, and SystemTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 4662US2024355615A1Method and apparatus for processing substrateTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 4761US11680320B2Ruthenium film forming method and substrate processing systemTOKYO ELECTRON LTD·Filed 2020·Granted Jun 20, 2023·0 cites·4 claims
- 4861US2007160757A1Processing methodTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 4961US2012315404A1Apparatus for thermal and plasma enhanced vapor deposition and method of operatingLI YICHENG·Filed 2012·Application pending·0 cites
- 5061US2024379377A1Substrate processing method and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 119 patent records by PatentIndex Score.
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