Inventor · disambiguated record
Eui-Seong Hwang
Also filed as: HWANG EUI-SEONG
17 granted patents·1 pending application·344 citations·filing 1999–2015
93Inventor score
Top patents by PatentIndex Score
18 records- 0196US6623799B1Chemical vapor deposition method using a catalyst on a substrate surfaceGENITECH CO LTD·Filed 1999·Granted Sep 23, 2003·296 cites·4 claims
- 0284US8860127B2Vertical channel transistor with self-aligned gate electrode and method for fabricating the sameCHO HEUNG-JAE·Filed 2012·Granted Oct 14, 2014·6 cites·6 claims
- 0383US9245976B2Vertical channel transistor with self-aligned gate electrode and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Jan 26, 2016·5 cites·28 claims
- 0483US8609491B2Method for fabricating semiconductor device with buried bit linesHWANG EUI-SEONG·Filed 2011·Granted Dec 17, 2013·8 cites·24 claims
- 0582US8912604B2Semiconductor device having buried bit lines and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted Dec 16, 2014·5 cites·12 claims
- 0682US8906775B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2012·Granted Dec 9, 2014·6 cites·15 claims
- 0777US8936982B2Semiconductor device with buried bit line and method for fabricating the sameSK HYNIX INC·Filed 2012·Granted Jan 20, 2015·3 cites·5 claims
- 0877US8921930B2Semiconductor device with buried bit line and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted Dec 30, 2014·3 cites·11 claims
- 0973US9236386B2Semiconductor device with buried bit line and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Jan 12, 2016·2 cites·7 claims
- 1070US9443858B2Semiconductor device having buried bit lines and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Sep 13, 2016·2 cites·16 claims
- 1165US9484335B2Semiconductor device with buried bitline and method for fabricating the sameSK HYNIX INC·Filed 2012·Granted Nov 1, 2016·2 cites·9 claims
- 1264US9087856B2Semiconductor device with buried bit line and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Jul 21, 2015·1 cites·5 claims
- 1363US9287169B2Method for fabricating a semiconductor device having buried bit linesSK HYNIX INC·Filed 2014·Granted Mar 15, 2016·1 cites·13 claims
- 1462US8907409B2Semiconductor device having buried bit lines and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted Dec 9, 2014·1 cites·5 claims
- 1561US8643096B2Semiconductor device with buried bit line and method for fabricating the sameHWANG EUI-SEONG·Filed 2012·Granted Feb 4, 2014·1 cites·13 claims
- 1660US7504300B2Method for fabricating semiconductor memory device having cylinder type storage nodeHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Mar 17, 2009·2 cites·18 claims
- 1755US9379117B2Semiconductor device with buried bit line and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted Jun 28, 2016·0 cites·7 claims
- 1842US2005250321A1Method for fabricating semiconductor device having diffusion barrier layerHWANG EUI-SEONG·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →