Inventor · disambiguated record
Heung-Jae Cho
Also filed as: CHO HEUNG-JAE
76 granted patents·10 pending applications·668 citations·filing 1999–2015
99Inventor score
Top patents by PatentIndex Score
86 records- 0197US7682911B2Semiconductor device having a fin transistor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 23, 2010·43 cites·9 claims
- 0296US7713823B2Semiconductor device with vertical channel transistor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted May 11, 2010·33 cites·13 claims
- 0395US6506676B2Method of manufacturing semiconductor devices with titanium aluminum nitride work functionHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jan 14, 2003·98 cites·21 claims
- 0493US6664160B2Gate structure with high K dielectricHYUNDAI ELECTRONICS IND·Filed 2002·Granted Dec 16, 2003·60 cites·17 claims
- 0589US8237220B2Semiconductor device with vertical channel transistorSUNG MIN-GYU·Filed 2010·Granted Aug 7, 2012·8 cites·10 claims
- 0688US7563726B2Semiconductor device with multiple gate dielectric layers and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Jul 21, 2009·14 cites·7 claims
- 0787US7112486B2Method for fabricating semiconductor device by using radical oxidationHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Sep 26, 2006·47 cites·18 claims
- 0886US7629219B2Method of fabricating a dual polysilicon gate of a semiconductor device with a multi-plane channelHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Dec 8, 2009·8 cites·24 claims
- 0984US8860127B2Vertical channel transistor with self-aligned gate electrode and method for fabricating the sameCHO HEUNG-JAE·Filed 2012·Granted Oct 14, 2014·6 cites·6 claims
- 1083US9245976B2Vertical channel transistor with self-aligned gate electrode and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Jan 26, 2016·5 cites·28 claims
- 1183US7842594B2Semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 30, 2010·8 cites·19 claims
- 1282US9165924B2Vertical channel type nonvolatile memory device and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted Oct 20, 2015·5 cites·4 claims
- 1382US8906775B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2012·Granted Dec 9, 2014·6 cites·15 claims
- 1482US7029999B2Method for fabricating transistor with polymetal gate electrodeHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 18, 2006·30 cites·17 claims
- 1582US6642132B2Cmos of semiconductor device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 4, 2003·25 cites·11 claims
- 1681US7928493B2Nonvolatile memory device with multiple blocking layers and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Apr 19, 2011·6 cites·8 claims
- 1781US6734113B1Method for forming multiple gate oxide layersHYNIX SEMICONDUCTOR INC·Filed 2003·Granted May 11, 2004·25 cites·7 claims
- 1880US6768179B2CMOS of semiconductor device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Jul 27, 2004·21 cites·6 claims
- 1979US6511875B2Method for making high K dielectric gate for semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Jan 28, 2003·18 cites·14 claims
- 2078US8410547B2Semiconductor device and method for fabricating the sameCHO HEUNG-JAE·Filed 2010·Granted Apr 2, 2013·4 cites·18 claims
- 2178US6617212B2Semiconductor device and method for fabricating the same using damascene processHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Sep 9, 2003·25 cites·15 claims
- 2277US8936982B2Semiconductor device with buried bit line and method for fabricating the sameSK HYNIX INC·Filed 2012·Granted Jan 20, 2015·3 cites·5 claims
- 2377US8441079B2Semiconductor device with gate stack structureLIM KWAN-YONG·Filed 2011·Granted May 14, 2013·3 cites·15 claims
- 2476US8039337B2Nonvolatile memory device with multiple blocking layers and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2011·Granted Oct 18, 2011·3 cites·14 claims
- 2576US7902614B2Semiconductor device with gate stack structureHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 8, 2011·4 cites·11 claims
- 2676US7687389B2Method for fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 30, 2010·6 cites·10 claims
- 2776US7528042B2Method for fabricating semiconductor devices having dual gate oxide layerHYNIX SEMICONDUCTOR INC·Filed 2006·Granted May 5, 2009·4 cites·4 claims
- 2876US6828185B2CMOS of semiconductor device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Dec 7, 2004·20 cites·3 claims
- 2975US8241974B2Nonvolatile memory device with multiple blocking layers and method of fabricating the sameCHO HEUNG-JAE·Filed 2011·Granted Aug 14, 2012·3 cites·15 claims
- 3075US7776694B2Method for fabricating a transistor having vertical channelHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Aug 17, 2010·5 cites·17 claims
- 3175US7217624B2Non-volatile memory device with conductive sidewall spacer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted May 15, 2007·16 cites·15 claims
- 3273US9236386B2Semiconductor device with buried bit line and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Jan 12, 2016·2 cites·7 claims
- 3372US8048742B2Transistor including bulb-type recess channel and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 1, 2011·4 cites·11 claims
- 3472US8008178B2Method for fabricating semiconductor device with an intermediate stack structureHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Aug 30, 2011·3 cites·25 claims
- 3572US7157359B2Method of forming a metal gate in a semiconductor device using atomic layer deposition processHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jan 2, 2007·16 cites·7 claims
- 3671US8053841B2Semiconductor device having a fin transistorHYNIX SEMICONDUCTOR INC·Filed 2010·Granted Nov 8, 2011·2 cites·8 claims
- 3769US7994558B2Method for forming barrier metal layer of bit line in semiconductor memory deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Aug 9, 2011·3 cites·5 claims
- 3869US7875540B2Method for manufacturing recess gate in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Jan 25, 2011·2 cites·12 claims
- 3969US7781333B2Semiconductor device with gate structure and method for fabricating the semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Aug 24, 2010·2 cites·16 claims
- 4068US8895392B2Method for fabricating semiconductor deviceSK HYNIX INC·Filed 2012·Granted Nov 25, 2014·2 cites·20 claims
- 4168US8105909B2Method of fabricating non-volatile memory deviceJOO MOON SIG·Filed 2010·Granted Jan 31, 2012·2 cites·16 claims
- 4268US7838364B2Semiconductor device with bulb-type recessed channel and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 23, 2010·3 cites·17 claims
- 4368US7579265B2Method for manufacturing recess gate in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Aug 25, 2009·2 cites·12 claims
- 4468US6448166B2Method for forming a gate for semiconductor devicesHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Sep 10, 2002·11 cites·20 claims
- 4567US9064854B2Semiconductor device with gate stack structureSK HYNIX INC·Filed 2013·Granted Jun 23, 2015·1 cites·19 claims
- 4667US8796090B2Semiconductor device with vertical channel transistor and method for fabricating the sameSK HYNIX INC·Filed 2012·Granted Aug 5, 2014·2 cites·16 claims
- 4767US7816209B2Method for fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Oct 19, 2010·2 cites·18 claims
- 4867US7736975B2Method for manufacturing non-volatile memory device having charge trap layerHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 15, 2010·3 cites·9 claims
- 4965US9484335B2Semiconductor device with buried bitline and method for fabricating the sameSK HYNIX INC·Filed 2012·Granted Nov 1, 2016·2 cites·9 claims
- 5065US7981786B2Method of fabricating non-volatile memory device having charge trapping layerHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jul 19, 2011·3 cites·18 claims
Showing the top 50 of 86 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →