Inventor · disambiguated record
Shang-Hui Tu
Also filed as: TU SHANG-HUI · TU SHANG-HUI L · TU SHANG-HUI LARRY
45 granted patents·2 pending applications·465 citations·filing 1992–2018
98Inventor score
Top patents by PatentIndex Score
47 records- 0195US9054129B1Semiconductor device and method for manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Jun 9, 2015·18 cites·13 claims
- 0294US8704300B1Semiconductor device and fabricating method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2012·Granted Apr 22, 2014·22 cites·18 claims
- 0393US9129989B1Semiconductor device and method for manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2015·Granted Sep 8, 2015·8 cites·11 claims
- 0492US5241195AMerged P-I-N/Schottky power rectifier having extended P-I-N junctionUNIV NORTH CAROLINA STATE·Filed 1992·Granted Aug 31, 1993·93 cites·16 claims
- 0591US9306034B2Method and apparatus for power device with multiple doped regionsVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Apr 5, 2016·8 cites·9 claims
- 0690US8836017B2Semiconductor device and fabricating method thereofLEE TSUNG-HSIUNG·Filed 2012·Granted Sep 16, 2014·11 cites·28 claims
- 0790US8643089B2Semiconductor device and fabricating method thereofLEE TSUNG-HSIUNG·Filed 2012·Granted Feb 4, 2014·12 cites·14 claims
- 0889US9076887B2Method of fabricating a vertical diffusion metal-oxide-semiconductor transistorLEE TSUNG-HSIUNG·Filed 2012·Granted Jul 7, 2015·11 cites·14 claims
- 0987US8723256B1Semiconductor device and fabricating method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2012·Granted May 13, 2014·9 cites·12 claims
- 1087US8154078B2Semiconductor structure and fabrication method thereofCHANG YIH-JAU·Filed 2010·Granted Apr 10, 2012·12 cites·28 claims
- 1186US8642427B1Semiconductor device and method for fabricating the sameSIHOMBING RUDY OCTAVIUS·Filed 2012·Granted Feb 4, 2014·12 cites·17 claims
- 1285US5262668ASchottky barrier rectifier including schottky barrier regions of differing barrier heightsUNIV NORTH CAROLINA STATE·Filed 1992·Granted Nov 16, 1993·59 cites·7 claims
- 1384US9076862B2Semiconductor device and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2013·Granted Jul 7, 2015·8 cites·24 claims
- 1483US6110804AMethod of fabricating a semiconductor device having a floating field conductorSEMICONDUCTOR COMPONENTS IND·Filed 1997·Granted Aug 29, 2000·55 cites·11 claims
- 1582US9559200B2Method and apparatus for power device with multiple doped regionsVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Jan 31, 2017·2 cites·27 claims
- 1682US8252652B2Semiconductor structure and fabrication method thereofCHANG YIH-JAU·Filed 2010·Granted Aug 28, 2012·11 cites·17 claims
- 1779US9269808B2Method and apparatus for power device with depletion structureVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Feb 23, 2016·3 cites·42 claims
- 1878US8049307B2Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devicesVANGUARD INT SEMICONDUCT CORP·Filed 2009·Granted Nov 1, 2011·7 cites·5 claims
- 1976US9263574B1Semiconductor device and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Feb 16, 2016·3 cites·20 claims
- 2076US8921202B2Semiconductor device and fabrication method thereofLIN GEENG-LIH·Filed 2011·Granted Dec 30, 2014·5 cites·10 claims
- 2169US9466730B2Semiconductor device and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Oct 11, 2016·2 cites·13 claims
- 2269US7795083B2Semiconductor structure and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2009·Granted Sep 14, 2010·4 cites·16 claims
- 2369US5345101AHigh voltage semiconductor structure and methodMOTOROLA INC·Filed 1993·Granted Sep 6, 1994·28 cites·9 claims
- 2467US9070763B1Semiconductor device layout structureVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Jun 30, 2015·2 cites·40 claims
- 2567US5541122AMethod of fabricating an insulated-gate bipolar transistorMOTOROLA INC·Filed 1995·Granted Jul 30, 1996·35 cites·17 claims
- 2666US9263436B2Semiconductor device and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Feb 16, 2016·2 cites·22 claims
- 2766US9130033B2Semiconductor device and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2013·Granted Sep 8, 2015·2 cites·24 claims
- 2866US8008687B2Electrostatic discharge protection deviceVANGUARD INT SEMICONDUCT CORP·Filed 2009·Granted Aug 30, 2011·3 cites·21 claims
- 2964US10573738B2Method and apparatus for power device with multiple doped regionsVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted Feb 25, 2020·0 cites·20 claims
- 3063US8232596B2Semiconductor structure and fabrication method thereofTU SHANG-HUI·Filed 2009·Granted Jul 31, 2012·2 cites·7 claims
- 3161US8501565B2Method for fabricating deep trench isolationCHIN YU-LUNG·Filed 2011·Granted Aug 6, 2013·2 cites·16 claims
- 3259US10205014B2Method and apparatus for power device with multiple doped regionsVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Feb 12, 2019·0 cites·10 claims
- 3356US9443943B2Semiconductor device and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Sep 13, 2016·0 cites·12 claims
- 3452US10868198B2Semiconductor device including zener diode and method of manufacturing thereofVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 3552US5903038ASemiconductor sensing device and method for fabricating the sameMOTOROLA INC·Filed 1997·Granted May 11, 1999·14 cites·17 claims
- 3651US9455345B2Method and apparatus for power device with depletion structureVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Sep 27, 2016·0 cites·31 claims
- 3749US2016064573A1Semiconductor device including zener diode and method of manufacturing thereofVANGUARD INT SEMICONDUCT CORP·Filed 2014·Application pending·0 cites
- 3848US8809950B2Semiconductor structure and fabrication method thereofTU SHANG-HUI·Filed 2012·Granted Aug 19, 2014·0 cites·6 claims
- 3948US8669149B2Semiconductor structure and fabrication method thereofTU SHANG-HUI·Filed 2012·Granted Mar 11, 2014·0 cites·11 claims
- 4044US9318601B2Semiconductor device and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Apr 19, 2016·0 cites·16 claims
- 4144US7838931B2High voltage semiconductor devices with Schottky diodesVANGUARD INT SEMICONDUCT CORP·Filed 2009·Granted Nov 23, 2010·0 cites·16 claims
- 4243US9236459B2Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devicesJOU YEH-NING·Filed 2011·Granted Jan 12, 2016·0 cites·9 claims
- 4341US9048115B2Superjunction transistor with implantation barrier at the bottom of a trenchVANGUARD INT SEMICONDUCT CORP·Filed 2012·Granted Jun 2, 2015·0 cites·15 claims
- 4440US9634099B2Lateral double diffused metal-oxide-semiconductor device and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2013·Granted Apr 25, 2017·0 cites·13 claims
- 4539US2015137229A1Semiconductor device and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2013·Application pending·0 cites
- 4638US8093630B2Semiconductor device and lateral diffused metal-oxide-semiconductor transistorLIN JIMMY·Filed 2009·Granted Jan 10, 2012·0 cites·27 claims
- 4736US9553143B2Semiconductor device and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2015·Granted Jan 24, 2017·0 cites·20 claims
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