Inventor · disambiguated record

Hyeokjun Son

Also filed as: SON HYEOKJUN

3 granted patents·3 citations·filing 2013–2023

54Inventor score

Technology areasH10D

Files withSAMSUNG ELECTRONICS CO LTD3

Top patents by PatentIndex Score

3 records

0168US8772115B2Semiconductor device having selectively nitrided gate insulating layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 8, 2014·3 cites·16 claims
0265US11955523B2Semiconductor device including a gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 9, 2024·0 cites·20 claims
0358US11594604B2Semiconductor device including a gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →