Inventor · disambiguated record
Muneyoshi Suita
Also filed as: SUITA MUNEYOSHI
4 granted patents·4 pending applications·21 citations·filing 2008–2022
69Inventor score
Top patents by PatentIndex Score
8 records- 0188US8035130B2Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity regionMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Oct 11, 2011·16 cites·9 claims
- 0282US11107685B2Semiconductor manufacturing method and semiconductor manufacturing deviceMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Aug 31, 2021·4 cites·9 claims
- 0359US8987125B2Method for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Mar 24, 2015·1 cites·16 claims
- 0449US2025380446A1Nitride semiconductor device and method of manufacturing nitride semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2022·Application pending·0 cites
- 0544US9893210B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Feb 13, 2018·0 cites·16 claims
- 0642US2011316047A1Semiconductor device and manufacturing method of the sameNANJO TAKUMA·Filed 2011·Application pending·0 cites
- 0739US2015069408A1Heterojunction field effect transistor and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2014·Application pending·0 cites
- 0827US2015228756A1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →