Inventor · disambiguated record
Hsin-Ming Chen
Also filed as: CHEN HSIN · CHEN HSIN-MING
89 granted patents·36 pending applications·1,155 citations·filing 1999–2025
99Inventor score
Files withEMEMORY TECHNOLOGY INC59TAIWAN SEMICONDUCTOR MFG10CHEN HSIN-MING8TOPPOLY OPTOELECTRONICS CORP8LU HAU-YAN5
Top patents by PatentIndex Score
125 records- 0199US9935113B2Non-volatile memory and method for programming and reading a memory array having the sameEMEMORY TECHNOLOGY INC·Filed 2017·Granted Apr 3, 2018·61 cites·19 claims
- 0299US9613714B1One time programming memory cell and memory array for physically unclonable function technology and associated random code generating methodEMEMORY TECHNOLOGY INC·Filed 2016·Granted Apr 4, 2017·101 cites·20 claims
- 0397US8592886B2Erasable programmable single-ploy nonvolatile memoryHSU TE-HSUN·Filed 2012·Granted Nov 26, 2013·58 cites·26 claims
- 0497US7903472B2Operating method of non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2009·Granted Mar 8, 2011·40 cites·10 claims
- 0597US7250654B2Non-volatile memory deviceEMEMORY TECHNOLOGY INC·Filed 2005·Granted Jul 31, 2007·48 cites·29 claims
- 0696US9620176B2One-time programmable memory array having small chip areaEMEMORY TECHNOLOGY INC·Filed 2016·Granted Apr 11, 2017·13 cites·34 claims
- 0795US10649735B2Security system with entropy bitsEMEMORY TECHNOLOGY INC·Filed 2018·Granted May 12, 2020·11 cites·33 claims
- 0895US8941167B2Erasable programmable single-ploy nonvolatile memoryCHEN WEI-REN·Filed 2012·Granted Jan 27, 2015·30 cites·20 claims
- 0995US6576558B1High aspect ratio shallow trench using silicon implanted oxideTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 10, 2003·113 cites·16 claims
- 1094US10177924B1Physically unclonable function unit with one single anti-fuse transistorEMEMORY TECHNOLOGY INC·Filed 2018·Granted Jan 8, 2019·8 cites·15 claims
- 1194US9324381B2Antifuse OTP memory cell with performance improvement, and manufacturing method and operating method of memoryEMEMORY TECHNOLOGY INC·Filed 2015·Granted Apr 26, 2016·8 cites·22 claims
- 1294US8344445B2Non-volatile semiconductor memory cell with dual functionsEMEMORY TECHNOLOGY INC·Filed 2012·Granted Jan 1, 2013·18 cites·7 claims
- 1394US7209392B2Single poly non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2005·Granted Apr 24, 2007·40 cites·19 claims
- 1494US7172940B1Method of fabricating an embedded non-volatile memory deviceEMEMORY TECHNOLOGY INC·Filed 2005·Granted Feb 6, 2007·39 cites·7 claims
- 1593US9281074B2One time programmable memory cell capable of reducing leakage current and preventing slow bit responseEMEMORY TECHNOLOGY INC·Filed 2014·Granted Mar 8, 2016·13 cites·10 claims
- 1691US10915464B2Security system using random number bit stringEMEMORY TECHNOLOGY INC·Filed 2018·Granted Feb 9, 2021·8 cites·22 claims
- 1791US6787405B2Method of fabricating liquid crystal display devices integrated with driving circuitTOPPOLY OPTOELECTRONICS CORP·Filed 2003·Granted Sep 7, 2004·45 cites·12 claims
- 1890US10691414B2Random code generator and associated random code generating methodEMEMORY TECHNOLOGY INC·Filed 2018·Granted Jun 23, 2020·4 cites·13 claims
- 1990US9601499B2One-time programmable memory cell capable of reducing leakage current and preventing slow bit response, and method for programming a memory array comprising the sameEMEMORY TECHNOLOGY INC·Filed 2016·Granted Mar 21, 2017·6 cites·17 claims
- 2090US9531067B2Adjustable-tilt housing with flattened dome shape, array antenna, and bracket mountUBIQUITI NETWORKS INC·Filed 2014·Granted Dec 27, 2016·7 cites·10 claims
- 2190US9373885B2Radio system for high-speed wireless communicationUBIQUITI NETWORKS INC·Filed 2014·Granted Jun 21, 2016·8 cites·18 claims
- 2289US8638589B2Operating method for non-volatile memory unitLU HAU-YAN·Filed 2012·Granted Jan 28, 2014·12 cites·12 claims
- 2388US7660087B2Electrostatic discharge avoiding circuitEMEMORY TECHNOLOGY INC·Filed 2008·Granted Feb 9, 2010·17 cites·15 claims
- 2488US7447082B2Method for operating single-poly non-volatile memory deviceEMEMORY TECHNOLOGY INC·Filed 2006·Granted Nov 4, 2008·10 cites·8 claims
- 2588US7190623B2Non-volatile memory cell and method of operating the sameEMEMORY TECHNOLOGY INC·Filed 2005·Granted Mar 13, 2007·16 cites·29 claims
- 2687US9013910B2Antifuse OTP memory cell with performance improvement prevention and operating method of memoryEMEMORY TECHNOLOGY INC·Filed 2013·Granted Apr 21, 2015·11 cites·17 claims
- 2785US6734055B1Multi-level (4 state/2-bit) stacked gate flash memory cellTAIWAN SEMICONDUCTOR MANUFACTO·Filed 2002·Granted May 11, 2004·30 cites·18 claims
- 2884US7262457B2Non-volatile memory cellEMEMORY TECHNOLOGY INC·Filed 2004·Granted Aug 28, 2007·33 cites·5 claims
- 2983US7706114B2ESD avoiding circuits based on the ESD detectors in a feedback loopEMEMORY TECHNOLOGY INC·Filed 2007·Granted Apr 27, 2010·12 cites·24 claims
- 3082US10170828B2Adjustable-tilt housing with flattened dome shape, array antenna, and bracket mountUBIQUITI NETWORKS INC·Filed 2016·Granted Jan 1, 2019·2 cites·14 claims
- 3182US8384155B2Semiconductor capacitorEMEMORY TECHNOLOGY INC·Filed 2007·Granted Feb 26, 2013·8 cites·14 claims
- 3281US8681528B2One-bit memory cell for nonvolatile memory and associated controlling methodWU MENG-YI·Filed 2012·Granted Mar 25, 2014·10 cites·24 claims
- 3379US10122538B2Antifuse physically unclonable function unit and associated control methodEMEMORY TECHNOLOGY INC·Filed 2017·Granted Nov 6, 2018·3 cites·14 claims
- 3479US9099392B2Method of fabricating erasable programmable single-poly nonvolatile memoryEMEMORY TECHNOLOGY INC·Filed 2013·Granted Aug 4, 2015·4 cites·3 claims
- 3579US8724363B2Anti-fuse memory ultilizing a coupling channel and operating method thereofLU HAU-YAN·Filed 2012·Granted May 13, 2014·5 cites·8 claims
- 3679US6586765B2Wafer-level antenna effect detection pattern for VLSITAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jul 1, 2003·20 cites·8 claims
- 3778US11735266B2Antifuse-type one time programming memory cell and cell array structure with sameEMEMORY TECHNOLOGY INC·Filed 2021·Granted Aug 22, 2023·1 cites·18 claims
- 3878US11011835B2Adjustable-tilt housing with flattened dome shape, array antenna, and bracket mountUBIQUITI INC·Filed 2018·Granted May 18, 2021·1 cites·27 claims
- 3978US9362001B2Memory cell capable of operating under low voltage conditionsEMEMORY TECHNOLOGY INC·Filed 2015·Granted Jun 7, 2016·2 cites·24 claims
- 4078US8658495B2Method of fabricating erasable programmable single-poly nonvolatile memoryHSU TE-HSUN·Filed 2012·Granted Feb 25, 2014·4 cites·9 claims
- 4177US6822286B2Cmos-compatible read only memory and method for fabricating the sameEMEMORY TECHNOLOGY INC·Filed 2003·Granted Nov 23, 2004·18 cites·14 claims
- 4277US6818936B2Scaled EEPROM cell by metal-insulator-metal (MIM) couplingTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 16, 2004·26 cites·19 claims
- 4377US6812083B2Fabrication method for non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2003·Granted Nov 2, 2004·25 cites·7 claims
- 4476US11670844B2Adjustable-tilt housing with flattened dome shape, array antenna, and bracket mountUBIQUITI INC·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 4576US7768059B2Nonvolatile single-poly memory deviceEMEMORY TECHNOLOGY INC·Filed 2007·Granted Aug 3, 2010·5 cites·7 claims
- 4676US7295261B2Light guide plate with W-shaped structures and backlight module using the sameINNOLUX DISPLAY CORP·Filed 2006·Granted Nov 13, 2007·4 cites·8 claims
- 4775US6816210B2Method for forming a self-aligned pixel electrode of an LCDTOPPOLY OPTOELECTRONICS CORP·Filed 2003·Granted Nov 9, 2004·15 cites·20 claims
- 4874US8363475B2Non-volatile memory unit cell with improved sensing margin and reliabilityEMEMORY TECHNOLOGY INC·Filed 2010·Granted Jan 29, 2013·3 cites·9 claims
- 4972US7551494B2Single-poly non-volatile memory device and its operation methodEMEMORY TECHNOLOGY INC·Filed 2008·Granted Jun 23, 2009·3 cites·8 claims
- 5072US6407790B1Method of fabricating a liquid crystal displayAU OPTRONICS CORP·Filed 2000·Granted Jun 18, 2002·13 cites·23 claims
Showing the top 50 of 125 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →