Inventor · disambiguated record
Joel M. Mcgregor
Also filed as: MCGREGOR JOEL · MCGREGOR JOEL M · MCGREGOR JOEL MONTGOMERY
15 granted patents·11 pending applications·182 citations·filing 1997–2023
92Inventor score
Files withMONOLITHIC POWER SYSTEMS INC16MAXIM INTEGRATED PRODUCTS4MCGREGOR JOEL MONTGOMERY2NAT SEMICONDUCTOR CORP2MCGREGOR JOEL M1
Top patents by PatentIndex Score
26 records- 0192US10090409B2Method for fabricating LDMOS with self-aligned bodyMONOLITHIC POWER SYSTEMS INC·Filed 2016·Granted Oct 2, 2018·13 cites·7 claims
- 0291US11508806B1Low leakage ESD MOSFETMONOLITHIC POWER SYSTEMS INC·Filed 2021·Granted Nov 22, 2022·2 cites·14 claims
- 0391US9502251B1Method for fabricating low-cost isolated resurf LDMOS and associated BCD manufacturing processMONOLITHIC POWER SYSTEMS INC·Filed 2015·Granted Nov 22, 2016·8 cites·20 claims
- 0487US9941171B1Method for fabricating LDMOS with reduced source regionMONOLITHIC POWER SYSTEMS INC·Filed 2016·Granted Apr 10, 2018·5 cites·6 claims
- 0587US9893170B1Manufacturing method of selectively etched DMOS body pickupMONOLITHIC POWER SYSTEMS INC·Filed 2016·Granted Feb 13, 2018·5 cites·15 claims
- 0687US8946851B1Integrated MOS power transistor with thin gate oxide and low gate chargeMCGREGOR JOEL MONTGOMERY·Filed 2012·Granted Feb 3, 2015·11 cites·18 claims
- 0786US9893146B1Lateral DMOS and the method for forming thereofMONOLITHIC POWER SYSTEMS INC·Filed 2016·Granted Feb 13, 2018·5 cites·12 claims
- 0884US8987818B1Integrated MOS power transistor with thin gate oxide and low gate chargeMCGREGOR JOEL MONTGOMERY·Filed 2011·Granted Mar 24, 2015·9 cites·11 claims
- 0982US5811315AMethod of forming and planarizing deep isolation trenches in a silicon-on-insulator (SOI) structureNAT SEMICONDUCTOR CORP·Filed 1997·Granted Sep 22, 1998·75 cites·20 claims
- 1075US9087774B2LDMOS device with short channel and associated fabrication methodMONOLITHIC POWER SYSTEMS INC·Filed 2013·Granted Jul 21, 2015·3 cites·15 claims
- 1174US9450052B1EEPROM memory cell with a coupler region and method of making the sameMONOLITHIC POWER SYSTEMS INC·Filed 2015·Granted Sep 20, 2016·2 cites·20 claims
- 1270US10665712B2LDMOS device with a field plate contact metal layer with a sub-maximum sizeMonolithic power systems co ltd·Filed 2018·Granted May 26, 2020·2 cites·17 claims
- 1369US6362064B2Elimination of walkout in high voltage trench isolated devicesNAT SEMICONDUCTOR CORP·Filed 1998·Granted Mar 26, 2002·40 cites·3 claims
- 1459US9041102B2Power transistor and associated method for manufacturingMCGREGOR JOEL M·Filed 2012·Granted May 26, 2015·2 cites·10 claims
- 1554US2024072160A1Semiconductor device with trench structures and method for manufacturing sameMONOLITHIC POWER SYSTEMS INC·Filed 2023·Application pending·0 cites
- 1650US11069777B1Manufacturing method of self-aligned DMOS body pickupMONOLITHIC POWER SYSTEMS INC·Filed 2020·Granted Jul 20, 2021·0 cites·18 claims
- 1750US2018374949A1Method for fabricating ldmos with self-aligned bodyMONOLITHIC POWER SYSTEMS INC·Filed 2018·Application pending·0 cites
- 1850US2015001620A1Ldmos device with improved avalanche energy and associated fabricating methodMONOLITHIC POWER SYSTEMS INC·Filed 2013·Application pending·0 cites
- 1946US2021408250A1Method of distributing metal layers in a power deviceMONOLITHIC POWER SYSTEMS INC·Filed 2020·Application pending·0 cites
- 2045US2015162441A1Ldmos device with improved avalanche energy and associated fabricating methodMONOLITHIC POWER SYSTEMS INC·Filed 2015·Application pending·0 cites
- 2144US2011115018A1Mos power transistorMAXIM INTEGRATED PRODUCTS·Filed 2009·Application pending·0 cites
- 2243US2020144381A1Ldmos device with a drain contact structure with reduced sizeMONOLITHIC POWER SYSTEMS INC·Filed 2018·Application pending·0 cites
- 2342US2015061008A1Ldmosfet having a bridge region formed between two gate electrodesMAXIM INTEGRATED PRODUCTS·Filed 2014·Application pending·0 cites
- 2442US2011115019A1Cmos compatible low gate charge lateral mosfetMAXIM INTEGRATED PRODUCTS·Filed 2009·Application pending·0 cites
- 2541US2021193805A1Lateral transistor with lateral conductive field plate over a field plate positioning layerMONOLITHIC POWER SYSTEMS INC·Filed 2019·Application pending·0 cites
- 2636US2018286860A1Cmos compatible low gate charge high voltage pmosMAXIM INTEGRATED PRODUCTS·Filed 2018·Application pending·0 cites
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