Inventor · disambiguated record
Gab-Jin Nam
Also filed as: NAM GAB-JIN
20 granted patents·11 pending applications·225 citations·filing 2001–2015
94Inventor score
Top patents by PatentIndex Score
31 records- 0198US7482677B2Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 27, 2009·88 cites·7 claims
- 0290US9564435B2Semiconductor device including FinFETs having different gate structures and method of manufacturing the semiconductor deviceCHUNG EUN-AE·Filed 2015·Granted Feb 7, 2017·16 cites·28 claims
- 0387US9368589B2Semiconductor device and semiconductor moduleSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 14, 2016·10 cites·25 claims
- 0484US6599807B2Method for manufacturing capacitor of semiconductor device having improved leakage current characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 29, 2003·33 cites·17 claims
- 0581US7646067B2Complementary metal-oxide-semiconductor transistor including multiple gate conductive layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 12, 2010·8 cites·4 claims
- 0678US9153696B2Semiconductor device having tri-gate transistor and method of manufacturing the sameAN TAE-HYUN·Filed 2014·Granted Oct 6, 2015·7 cites·13 claims
- 0777US7396719B2Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric filmSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 8, 2008·18 cites·4 claims
- 0876US9634144B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 25, 2017·3 cites·3 claims
- 0975US7585756B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·6 cites·6 claims
- 1072US7144771B2Methods of forming electronic devices including dielectric layers with different densities of titaniumSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 5, 2006·12 cites·32 claims
- 1169US8785267B2Methods of manufacturing semiconductor devices including transistorsBAEK SUNG-KWEON·Filed 2012·Granted Jul 22, 2014·3 cites·17 claims
- 1269US8119486B2Methods of manufacturing semiconductor devices having a recessed-channelKIM YOUNG-PIL·Filed 2011·Granted Feb 21, 2012·3 cites·20 claims
- 1367US6992346B2Integrated circuit devices with metal-insulator-metal capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 31, 2006·9 cites·28 claims
- 1464US7442981B2Capacitor of semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 28, 2008·4 cites·23 claims
- 1561US9443735B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 13, 2016·1 cites·11 claims
- 1653US7135422B2Methods of forming a multi-layered structure using an atomic layer deposition process and methods of forming a capacitor of an integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 14, 2006·4 cites·23 claims
- 1753US2008268653A1Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric filmSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1851US2007040207A1Electronic devices including dielectric layers with different densities of titaniumNAM GAB-JIN·Filed 2006·Application pending·0 cites
- 1948US2006060907A1Methods of forming integrated circuit devices with metal-insulator-metal capacitorsKIM KI-CHUL·Filed 2005·Application pending·0 cites
- 2047US7910421B2Methods of forming devices including different gate insulating layers on PMOS/NMOS regionsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 22, 2011·0 cites·20 claims
- 2146US7648874B2Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 19, 2010·0 cites·30 claims
- 2246US2005081787A1Apparatus and method for supplying a source, and method of depositing an atomic layer using the sameFiled 2004·Application pending·0 cites
- 2345US7696563B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 13, 2010·0 cites·16 claims
- 2443US7338863B2Semiconductor memory device and method of manufacturing the semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 4, 2008·0 cites·12 claims
- 2540US2006072281A1Methods of forming a layer utilizing a liquid-phase lanthanum precursor and methods of manufacturing a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 2640US2006063346A1Method of forming a layer and method of forming a capacitor of a semiconductor device having the sameLEE JONG-CHEOL·Filed 2005·Application pending·0 cites
- 2740US2014035058A1Semiconductor Devices and Methods of Manufacturing the SameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2840US2006014384A1Method of forming a layer and forming a capacitor of a semiconductor device having the same layerLEE JONG-CHEOL·Filed 2005·Application pending·0 cites
- 2938US2004166627A1Methods for forming a capacitor on an integrated circuit device at reduced temperaturesFiled 2003·Application pending·0 cites
- 3038US2012100684A1Method of fabricating semiconductor deviceMIN JI-YOUNG·Filed 2011·Application pending·0 cites
- 3132US2015228722A1Semiconductor device including fin-type field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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