Inventor · disambiguated record
Katsuomi Shiozawa
Also filed as: SHIOZAWA KATSUOMI
30 granted patents·7 pending applications·646 citations·filing 1995–2009
97Inventor score
Top patents by PatentIndex Score
37 records- 0196US6518623B1Semiconductor device having a buried-channel MOS structureMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 11, 2003·136 cites·3 claims
- 0289US5783491AMethod of forming a truck MOS gate or a power semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 21, 1998·85 cites·13 claims
- 0388US7456039B1Method for manufacturing semiconductor optical deviceMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Nov 25, 2008·11 cites·3 claims
- 0484US5508534ATrench gate type insulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 16, 1996·78 cites·25 claims
- 0583US6245641B1Semiconductor device comprising trench isolation insulator film and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 12, 2001·68 cites·9 claims
- 0681US6333540B1Semiconductor device manufacturing method and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Dec 25, 2001·27 cites·3 claims
- 0779US6518635B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 11, 2003·22 cites·18 claims
- 0878US6482718B2Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 19, 2002·27 cites·10 claims
- 0976US6387743B1Semiconductor device manufacturing method and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 14, 2002·20 cites·17 claims
- 1072US7067874B2Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being roundMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Jun 27, 2006·13 cites·5 claims
- 1172US6081662ASemiconductor device including trench isolation structure and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 27, 2000·44 cites·9 claims
- 1271US7582908B2Nitride semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Sep 1, 2009·3 cites·17 claims
- 1371US6548871B1Semiconductor device achieving reduced wiring length and reduced wiring delay by forming first layer wiring and gate upper electrode in same wire layerMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 15, 2003·19 cites·8 claims
- 1470US6383884B1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 7, 2002·16 cites·14 claims
- 1566US7964424B2Method for manufacturing nitride semiconductor light-emitting elementMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Jun 21, 2011·2 cites·19 claims
- 1666US6710401B2Semiconductor device including a trench with at least one of an edge of an opening and a bottom surface being roundMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Mar 23, 2004·10 cites·12 claims
- 1765US6661066B2Semiconductor device including inversely tapered gate electrode and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 9, 2003·23 cites·2 claims
- 1865US5578522ASemiconductor device and method of fabricating sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 26, 1996·28 cites·23 claims
- 1962US7939943B2Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layerMITSUBISHI ELECTRIC CORP·Filed 2008·Granted May 10, 2011·1 cites·6 claims
- 2061US8163576B2Nitride semiconductor device having a silicon-containing layer and manufacturing method thereofSHIOZAWA KATSUOMI·Filed 2009·Granted Apr 24, 2012·2 cites·10 claims
- 2155US6737315B2Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrateRENESAS TECH CORP·Filed 2002·Granted May 18, 2004·5 cites·9 claims
- 2253US7795738B2Nitride semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Sep 14, 2010·0 cites·16 claims
- 2353US6890837B2Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrateRENESAS TECH CORP·Filed 2003·Granted May 10, 2005·4 cites·3 claims
- 2452US7683398B2Nitride semiconductor device having a silicon-containing connection layer and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Mar 23, 2010·0 cites·3 claims
- 2551US2006027883A1Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Application pending·0 cites
- 2648US7791097B2Nitride semiconductor device and manufacturing method of the sameMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Sep 7, 2010·0 cites·10 claims
- 2747US2009245311A1Process for producing nitride semiconductor laser, and nitride semiconductor laserMITSUBISHI ELECTRIC CORP·Filed 2009·Application pending·0 cites
- 2846US7714439B2Nitride semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2007·Granted May 11, 2010·0 cites·6 claims
- 2946US6707099B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2002·Granted Mar 16, 2004·2 cites·5 claims
- 3046US2009160054A1Nitride semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 3146US2009127661A1Nitride semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 3245US7842962B2Nitride semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Nov 30, 2010·0 cites·4 claims
- 3345US7678597B2Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contactMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Mar 16, 2010·0 cites·7 claims
- 3443US7378351B2Method of manufacturing nitride semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2005·Granted May 27, 2008·0 cites·4 claims
- 3543US2004092057A1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2003·Application pending·0 cites
- 3641US2009170304A1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 3736US2002020867A1Semiconductor device and method of manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →