Inventor · disambiguated record
Takeru Matsuoka
Also filed as: MATSUOKA TAKERU
21 granted patents·6 pending applications·280 citations·filing 1990–2020
94Inventor score
Top patents by PatentIndex Score
27 records- 0195US6417575B2Semiconductor device and fabrication process thereforMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 9, 2002·125 cites·12 claims
- 0290US8872257B1Semiconductor deviceTOSHIBA KK·Filed 2013·Granted Oct 28, 2014·14 cites·15 claims
- 0383US6683000B2Semiconductor-device fabrication methodMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jan 27, 2004·38 cites·7 claims
- 0475US6479356B1Method of manufacturing a semiconductive device with an enhanced junction breakdown strengthMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 12, 2002·17 cites·3 claims
- 0574US8884362B2Semiconductor device and manufacturing method of the sameMATSUOKA TAKERU·Filed 2012·Granted Nov 11, 2014·5 cites·21 claims
- 0674US8350322B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2010·Granted Jan 8, 2013·4 cites·20 claims
- 0771US6483140B1DRAM storage node with insulating sidewallsMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 19, 2002·13 cites·3 claims
- 0870US6696732B2Semiconductor device having S/D to S/D connection and isolation region between two semiconductor elementsMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Feb 24, 2004·23 cites·7 claims
- 0967US10020391B2Semiconductor device and manufacturing method of the sameTOSHIBA KK·Filed 2014·Granted Jul 10, 2018·2 cites·17 claims
- 1061US9111771B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted Aug 18, 2015·1 cites·6 claims
- 1153US6081007ASemiconductor device comprising MIS transistor with high concentration channel injection regionMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jun 27, 2000·16 cites·5 claims
- 1252US5018168AClock signal conversion circuitFUJITSU LTD·Filed 1990·Granted May 21, 1991·11 cites·7 claims
- 1351US9401398B2Semiconductor device including transistorTOSHIBA KK·Filed 2015·Granted Jul 26, 2016·0 cites·7 claims
- 1450US6586838B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 1, 2003·4 cites·5 claims
- 1549US6740564B2Method for manufacturing a semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted May 25, 2004·4 cites·8 claims
- 1646US6888258B2Semiconductor device including copper interconnect line and bonding pad, and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Granted May 3, 2005·2 cites·12 claims
- 1744US10978588B2Semiconductor deviceTOSHIBA KK·Filed 2020·Granted Apr 13, 2021·0 cites·12 claims
- 1843US6503836B2Method and apparatus for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jan 7, 2003·1 cites·14 claims
- 1943US2015069598A1Heat dissipation connector and method of manufacturing same, semiconductor device and method of manufacturing same, and semiconductor manufacturing apparatusTOSHIBA KK·Filed 2014·Application pending·0 cites
- 2043US2015069592A1Semiconductor device, method of manufacturing same, and application board mounted with sameTOSHIBA KK·Filed 2014·Application pending·0 cites
- 2141US2004207085A1Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 2236US11004931B2Semiconductor deviceTOSHIBA KK·Filed 2017·Granted May 11, 2021·0 cites·11 claims
- 2335US2004157424A1Method of manufacturing electronic deviceRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 2433US6573603B2Semiconductor device, and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 3, 2003·0 cites·3 claims
- 2532US2013113039A1Semiconductor deviceMATSUOKA TAKERU·Filed 2012·Application pending·0 cites
- 2632US2004130033A1Semiconductor deviceRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 2729US6555887B1Semiconductor device with multi-layer interconnectionMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Apr 29, 2003·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →