Inventor · disambiguated record
Joong S. Jeon
Also filed as: JEON JOONG · JEON JOONG S · JEON JOONG SUNG
47 granted patents·5 pending applications·2,330 citations·filing 1999–2022
98Inventor score
Files withADVANCED MICRO DEVICES INC30SAMSUNG ELECTRONICS CO LTD8SPANSION LLC7MOON CHANG-WOOK3ANSE TECH CO LTD1
Top patents by PatentIndex Score
52 records- 0198US7071051B1Method for forming a thin, high quality buffer layer in a field effect transistor and related structureADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 4, 2006·550 cites·10 claims
- 0298US6586349B1Integrated process for fabrication of graded composite dielectric material layers for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 1, 2003·220 cites·19 claims
- 0397US6645882B1Preparation of composite high-K/standard-K dielectrics for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 11, 2003·122 cites·20 claims
- 0497US6562491B1Preparation of composite high-K dielectricsADVANCED MICRO DEVICES INC·Filed 2001·Granted May 13, 2003·147 cites·17 claims
- 0597US6559014B1Preparation of composite high-K / standard-K dielectrics for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted May 6, 2003·167 cites·20 claims
- 0697US6451641B1Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric materialADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 17, 2002·148 cites·20 claims
- 0796US6620671B1Method of fabricating transistor having a single crystalline gate conductorADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 16, 2003·135 cites·9 claims
- 0894US8460990B2CMOS transistor using germanium condensation and method of fabricating the sameKIM JUN-YOUN·Filed 2012·Granted Jun 11, 2013·16 cites·11 claims
- 0994US7365389B1Memory cell having enhanced high-K dielectricSPANSION LLC·Filed 2004·Granted Apr 29, 2008·89 cites·11 claims
- 1093US6790755B2Preparation of stack high-K gate dielectrics with nitrided layerADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 14, 2004·75 cites·20 claims
- 1193US6764898B1Implantation into high-K dielectric material after gate etch to facilitate removalADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 20, 2004·76 cites·23 claims
- 1292US9318573B2Field effect transistor having germanium nanorod and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 19, 2016·15 cites·13 claims
- 1391US6621114B1MOS transistors with high-k dielectric gate insulator for reducing remote scatteringADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 16, 2003·60 cites·14 claims
- 1491US6607973B1Preparation of high-k nitride silicate layers by cyclic molecular layer depositionADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 19, 2003·57 cites·14 claims
- 1591US6187657B1Dual material gate MOSFET techniqueADVANCED MICRO DEVICES INC·Filed 1999·Granted Feb 13, 2001·120 cites·42 claims
- 1689US6448127B1Process for formation of ultra-thin base oxide in high k/oxide stack gate dielectrics of mosfetsADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 10, 2002·69 cites·19 claims
- 1788US6797572B1Method for forming a field effect transistor having a high-k gate dielectric and related structureADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 28, 2004·36 cites·7 claims
- 1885US7294547B1SONOS memory cell having a graded high-K dielectricADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 13, 2007·12 cites·17 claims
- 1984US6872613B1Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structureADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 29, 2005·28 cites·25 claims
- 2084US6693004B1Interfacial barrier layer in semiconductor devices with high-K gate dielectric materialADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 17, 2004·33 cites·21 claims
- 2183US8115264B2Semiconductor device having a metal gate with a low sheet resistance and method of fabricating metal gate of the samePARK SUNG-HO·Filed 2008·Granted Feb 14, 2012·10 cites·16 claims
- 2283US7196008B1Aluminum oxide as liner or cover layer to spacers in memory deviceSPANSION LLC·Filed 2005·Granted Mar 27, 2007·11 cites·20 claims
- 2382US6849925B1Preparation of composite high-K/standard-K dielectrics for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 1, 2005·22 cites·20 claims
- 2480US7176531B1CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectricADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 13, 2007·22 cites·6 claims
- 2579US7674665B2Method of fabricating Schottky barrier transistorSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 9, 2010·5 cites·8 claims
- 2679US6376323B1Fabrication of gate of P-channel field effect transistor with added implantation before patterning of the gateADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 23, 2002·26 cites·18 claims
- 2778US7232724B1Radical oxidation for bitline oxide of SONOSSPANSION LLC·Filed 2005·Granted Jun 19, 2007·6 cites·14 claims
- 2872US7468296B1Thin film germanium diode with low reverse breakdownSPANSION LLC·Filed 2005·Granted Dec 23, 2008·4 cites·18 claims
- 2966US8232613B2Germanium silicide layer including vanadium, platinum, and nickelMOON CHANG-WOOK·Filed 2010·Granted Jul 31, 2012·2 cites·7 claims
- 3065US6905971B1Treatment of dielectric material to enhance etch rateADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 14, 2005·9 cites·20 claims
- 3164US7902011B2Method of fabricating Schottky barrier transistorSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 8, 2011·1 cites·7 claims
- 3264US6902977B1Method for forming polysilicon gate on high-k dielectric and related structureADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 7, 2005·10 cites·12 claims
- 3362US7863128B1Non-volatile memory device with improved erase speedSPANSION LLC·Filed 2005·Granted Jan 4, 2011·2 cites·8 claims
- 3462US7446369B2SONOS memory cell having high-K dielectricSPANSION LLC·Filed 2005·Granted Nov 4, 2008·2 cites·10 claims
- 3558US7800186B2Semiconductor device and method of fabricating metal gate of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 21, 2010·1 cites·11 claims
- 3657US6759346B1Method of forming dielectric layersADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 6, 2004·5 cites·18 claims
- 3752US7026211B1Semiconductor component and method of manufactureADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 11, 2006·4 cites·17 claims
- 3851US7863142B2Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 4, 2011·0 cites·17 claims
- 3951US6991990B1Method for forming a field effect transistor having a high-k gate dielectricADVANCED MICRO DEVICES INC·Filed 2004·Granted Jan 31, 2006·3 cites·7 claims
- 4050US6762454B1Stacked polysilicon layer for boron penetration inhibitionADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 13, 2004·4 cites·19 claims
- 4150US2009261381A1CMOS transistor using germanium condensation and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4248US8193030B2Methods of fabricating non-volatile memory devices having carbon nanotube layer and passivation layerMOON CHANG-WOOK·Filed 2011·Granted Jun 5, 2012·1 cites·10 claims
- 4348US2008272366A1Field effect transistor having germanium nanorod and method of manufacturing the sameMOON CHANG-WOOK·Filed 2008·Application pending·0 cites
- 4446US7033894B1Method for modulating flatband voltage of devices having high-k gate dielectrics by post-deposition annealingADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 25, 2006·2 cites·12 claims
- 4545US7863175B2Zero interface polysilicon to polysilicon gate for flash memorySPANSION LLC·Filed 2006·Granted Jan 4, 2011·0 cites·4 claims
- 4645US6992370B1Memory cell structure having nitride layer with reduced charge loss and method for fabricating sameADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 31, 2006·2 cites·12 claims
- 4745US2008150028A1Zero interface polysilicon to polysilicon gate for semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2006·Application pending·0 cites
- 4842US7884410B2Nonvolatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 8, 2011·1 cites·10 claims
- 4940US2008164533A1Method of manufacturing a germanosilicide and a semiconductor device having the germanosilicideSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 5037US8809936B2Memory cell system with multiple nitride layersXUE LEI·Filed 2006·Granted Aug 19, 2014·0 cites·18 claims
Showing the top 50 of 52 patent records by PatentIndex Score.
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