Inventor · disambiguated record
Kun-Hsi Li
Also filed as: LI KUN-HSI
18 granted patents·3 pending applications·72 citations·filing 2003–2025
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD15TEXAS INSTRUMENTS INC2CHANG JONATHAN TSUNG-YUNG1CHEN YEN-HUEI1TAIWAN SEMICONDUCTOR MFG1
Top patents by PatentIndex Score
21 records- 0192US10483971B1Physical unclonable device and method of maximizing existing process variation for a physically unclonable deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·10 cites·11 claims
- 0291US10483267B2Eight-transistor static random-access memory, layout thereof, and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·7 cites·20 claims
- 0390US8848461B2Memory cell having flexible read/write assist and method of usingCHANG JONATHAN TSUNG-YUNG·Filed 2012·Granted Sep 30, 2014·11 cites·20 claims
- 0487US10958270B2Physical unclonable device and method of maximizing existing process variation for a physically unclonable deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·3 cites·11 claims
- 0587US10872896B2Eight-transistor static random access memory, layout thereof, and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·3 cites·20 claims
- 0684US2024373615A1Eight-transistor static random access memory, layout thereof, and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0782US12082388B2Eight-transistor static random access memory, layout thereof, and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 0880US6819144B2Latched sense amplifier with full range differential input voltageTEXAS INSTRUMENTS INC·Filed 2003·Granted Nov 16, 2004·28 cites·10 claims
- 0978US8675418B2Memory write assistWU JUI-JEN·Filed 2010·Granted Mar 18, 2014·6 cites·20 claims
- 1074US9117500B2Memory write assistTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 25, 2015·4 cites·20 claims
- 1172US11832429B2Eight-transistor static random access memory, layout thereof, and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 28, 2023·0 cites·20 claims
- 1267US11210165B2Inter-hamming difference analyzer for memory array and measuring and testing methods for inter-hamming differences of memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·0 cites·20 claims
- 1361US2025392458A1Integrated circuit (ic) signatures with random number generator and one-time programmable deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1460US11962693B2Integrated circuit (IC) signatures with random number generator and one-time programmable deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 1559US12348626B2Integrated circuit (IC) signatures with random number generator and one-time programmable deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1654US10838809B2Memory array and measuring and testing methods for inter-hamming differences of memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
- 1753US11528135B2Integrated circuit (IC) signatures with random number generator and one-time programmable deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
- 1851US10372532B2Memory array and measuring and testing methods for inter-hamming differences of memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 6, 2019·0 cites·20 claims
- 1941US8767493B2SRAM differential voltage sensing apparatusCHEN YEN-HUEI·Filed 2011·Granted Jul 1, 2014·0 cites·21 claims
- 2036US10515710B2Hamming-distance analyzerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·0 cites·20 claims
- 2133US2007081379A1Write assist for latch and memory circuitsTEXAS INSTRUMENTS INC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →