Inventor · disambiguated record
Robert Strittmatter
Also filed as: STRITTMATTER ROBERT · STRITTMATTER ROBERT P
16 granted patents·5 pending applications·212 citations·filing 2001–2025
93Inventor score
Files withEFFICIENT POWER CONVERSION CORP14CALIFORNIA INST OF TECHN2LIDOW ALEXANDER2CALIFORNIA INSTITUE OF TECHNOL1EFFICIENT POWER CONV CORP1
Top patents by PatentIndex Score
21 records- 0196US8823012B2Enhancement mode GaN HEMT device with gate spacer and method for fabricating the sameLIDOW ALEXANDER·Filed 2012·Granted Sep 2, 2014·31 cites·11 claims
- 0294US6579068B2Method of manufacture of a suspended nitride membrane and a microperistaltic pump using the sameCALIFORNIA INST OF TECHN·Filed 2001·Granted Jun 17, 2003·72 cites·20 claims
- 0389US10096702B2Multi-step surface passivation structures and methods for fabricating sameEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Oct 9, 2018·7 cites·24 claims
- 0489US9837438B2GaN transistors with polysilicon layers used for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2015·Granted Dec 5, 2017·6 cites·8 claims
- 0589US9214461B2GaN transistors with polysilicon layers for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·9 cites·12 claims
- 0689US6647796B2Semiconductor nitride pressure microsensor and method of making and using the sameCALIFORNIA INSTITUE OF TECHNOL·Filed 2001·Granted Nov 18, 2003·44 cites·10 claims
- 0787US8853749B2Ion implanted and self aligned gate structure for GaN transistorsLIDOW ALEXANDER·Filed 2012·Granted Oct 7, 2014·8 cites·17 claims
- 0882US10312260B2GaN transistors with polysilicon layers used for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Jun 4, 2019·3 cites·17 claims
- 0982US9171911B2Isolation structure in gallium nitride devices and integrated circuitsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Oct 27, 2015·6 cites·26 claims
- 1077US7189358B2Integrated micropump analysis chip and method of making the sameCALIFORNIA INST OF TECHN·Filed 2001·Granted Mar 13, 2007·17 cites·16 claims
- 1175US7592747B1Piezoelectrically enhanced photocathodeUS NAT AERONAUTICS AND SPACE A·Filed 2005·Granted Sep 22, 2009·4 cites·27 claims
- 1272US10090274B2Flip chip interconnection with reduced current densityEFFICIENT POWER CONVERSION CORP·Filed 2015·Granted Oct 2, 2018·2 cites·15 claims
- 1365US9583480B2Integrated circuit with matching threshold voltages and method for making sameEFFICIENT POWER CONV CORP·Filed 2015·Granted Feb 28, 2017·1 cites·11 claims
- 1465US2025374643A1GaN HEMT WITH LOW THRESHOLD VOLTAGE SHIFT USING A HOLE INJECTOR/COLLECTOREFFICIENT POWER CONVERSION CORP·Filed 2025·Application pending·0 cites
- 1561US9214399B2Integrated circuit with matching threshold voltages and method for making sameEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·1 cites·20 claims
- 1660US2024413205A1GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIEREFFICIENT POWER CONVERSION CORP·Filed 2024·Application pending·0 cites
- 1759US9331191B2GaN device with reduced output capacitance and process for making sameEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted May 3, 2016·1 cites·11 claims
- 1858US2024234521A1GaN DEVICE WITH UNIFORM ELECTRIC FIELDEFFICIENT POWER CONVERSION CORP·Filed 2024·Application pending·0 cites
- 1958US2024274681A1GaN DEVICE WITH HOLE ELIMINATION CENTERSEFFICIENT POWER CONVERSION CORP·Filed 2024·Application pending·0 cites
- 2056US2025275216A1GaN DEVICE WITH HOLE ELIMINATION CENTERSEFFICIENT POWER CONVERSION CORP·Filed 2025·Application pending·0 cites
- 2146US9214528B2Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuitsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →