Inventor · disambiguated record
Byou-Ree Lim
Also filed as: LIM BYOU-REE
5 granted patents·2 pending applications·26 citations·filing 2003–2005
74Inventor score
Top patents by PatentIndex Score
7 records- 0182US7184316B2Non-volatile memory cell array having common drain lines and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 27, 2007·11 cites·32 claims
- 0266US6878575B2Method of forming gate oxide layer in semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 12, 2005·11 cites·15 claims
- 0341US7170794B2Programming method of a non-volatile memory device having a charge storage layer between a gate electrode and a semiconductor substrateSAMSUNG ELECTRONIS CO LTD·Filed 2004·Granted Jan 30, 2007·3 cites·24 claims
- 0441US7084041B2Bipolar device and method of manufacturing the same including pre-treatment using germane gasSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·1 cites·15 claims
- 0539US7586137B2Non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 8, 2009·0 cites·28 claims
- 0637US2006091458A1Nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 0734US2005067651A1Nonvolatile memory cell employing a plurality of dielectric nanoclusters and method of fabricating the sameFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →