Inventor · disambiguated record
Masahiko Urano
Also filed as: URANO MASAHIKO
15 granted patents·101 citations·filing 1990–2015
92Inventor score
Files withSHINETSU HANDOTAI KK10HOSHI RYOJI1SHIN ESTU HANDOTAI CO LTD1SUGAWARA KOSEI1TAKANO KIYOTAKA1
Top patents by PatentIndex Score
15 records- 0182US9260796B2Method for measuring distance between lower end surface of heat insulating member and surface of raw material melt and method for controlling thereofHOSHI RYOJI·Filed 2008·Granted Feb 16, 2016·5 cites·9 claims
- 0281US8885915B2Method for measuring and controlling distance between lower end surface of heat shielding member and surface of raw material melt and method for manufacturing silicon single crystalSUGAWARA KOSEI·Filed 2011·Granted Nov 11, 2014·3 cites·30 claims
- 0379US8085985B2Method for determining distance between reference member and melt surface, method for controlling location of melt surface using the same, and apparatus for production silicon single crystalURANO MASAHIKO·Filed 2007·Granted Dec 27, 2011·5 cites·29 claims
- 0465US9650724B2Method of charging raw material, method of manufacturing single crystals, and single crystal manufacturing apparatusSHINETSU HANDOTAI KK·Filed 2013·Granted May 16, 2017·2 cites·6 claims
- 0562US5882397ACrystal pulling methodSHINETSU HANDOTAI KK·Filed 1997·Granted Mar 16, 1999·16 cites·2 claims
- 0660US5879448ACrystal pulling methods and apparatusSHINETSU HANDOTAI KK·Filed 1997·Granted Mar 9, 1999·20 cites·16 claims
- 0752US5419277AMethod and apparatus for producing a Czochralski growth semiconductor single-crystalSHINETSU HANDOTAI KK·Filed 1994·Granted May 30, 1995·14 cites·7 claims
- 0848US5888299AApparatus for adjusting initial position of melt surfaceSHINETSU HANDOTAI KK·Filed 1996·Granted Mar 30, 1999·8 cites·5 claims
- 0947US5938841ADevice for producing a single crystalSHINETSU HANDOTAI KK·Filed 1996·Granted Aug 17, 1999·13 cites·22 claims
- 1044US8764900B2Apparatus and method for producing single crystalsTAKANO KIYOTAKA·Filed 2007·Granted Jul 1, 2014·0 cites·16 claims
- 1142US10113247B2Semiconductor single crystal pulling apparatus and method for remelting semiconductor single crystal using thisSHINETSU HANDOTAI KK·Filed 2015·Granted Oct 30, 2018·0 cites·12 claims
- 1242US5089239AWire vibration prevention mechanism for a single crystal pulling apparatusSHINETSU HANDOTAI KK·Filed 1990·Granted Feb 18, 1992·9 cites·3 claims
- 1332US5370077ASingle crystal rod pull-up growing apparatusSHINETSU HANDOTAI KK·Filed 1992·Granted Dec 6, 1994·3 cites·11 claims
- 1430US5851286ACrystal pulling apparatusSHINETSU HANDOTAI KK·Filed 1996·Granted Dec 22, 1998·1 cites·4 claims
- 1529US6010568AMethod for adjusting initial position of melt surfaceSHIN ESTU HANDOTAI CO LTD·Filed 1999·Granted Jan 4, 2000·2 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →