Inventor · disambiguated record
Jingfeng Bi
Also filed as: BI JINGFENG
5 granted patents·9 pending applications·2 citations·filing 2012–2022
62Inventor score
Files withXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD5XIAMEN SILAN ADVANCED COMPOUND SEMICONDUCTOR CO LTD4XIAMEN SANAN OPTOELECTRONICS CO LTD3SONG MINGHUI1TIANJIN SANAN OPTOELECTRONICS CO LTD1
Top patents by PatentIndex Score
14 records- 0184US11011674B2Multi-layered tunnel junction structure, light emitting device having the same, and production method of such deviceXIAMEN SANAN OPTOELECTRONICS CO LTD·Filed 2019·Granted May 18, 2021·2 cites·16 claims
- 0263US11043609B2Light emitting diode and method of manufacturing the sameXIAMEN SANAN OPTOELECTRONICS CO LTD·Filed 2019·Granted Jun 22, 2021·0 cites·12 claims
- 0356US9318643B2Fabrication method of inverted solar cellsXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2014·Granted Apr 19, 2016·0 cites·20 claims
- 0453US9437769B2Four-junction quaternary compound solar cell and method thereofXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2012·Granted Sep 6, 2016·0 cites·12 claims
- 0551US2015068581A1Fabrication Method for Multi-junction Solar CellsXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2014·Application pending·0 cites
- 0646US2014090700A1High-concentration multi-junction solar cell and method for fabricating sameSONG MINGHUI·Filed 2012·Application pending·0 cites
- 0744US2023343893A1Led epitaxial structure and led chipXIAMEN SILAN ADVANCED COMPOUND SEMICONDUCTOR CO LTD·Filed 2022·Application pending·0 cites
- 0843US11876154B2Light emitting diode device and method for manufacturing the sameXIAMEN SANAN OPTOELECTRONICS CO LTD·Filed 2020·Granted Jan 16, 2024·0 cites·19 claims
- 0942US2024204134A1Semiconductor light emitting element and manufacture method thereofXIAMEN SILAN ADVANCED COMPOUND SEMICONDUCTOR CO LTD·Filed 2022·Application pending·0 cites
- 1040US2021013354A1Solar cellTIANJIN SANAN OPTOELECTRONICS CO LTD·Filed 2020·Application pending·0 cites
- 1139US2024204133A1Semiconductor light emitting elementXIAMEN SILAN ADVANCED COMPOUND SEMICONDUCTOR CO LTD·Filed 2022·Application pending·0 cites
- 1236US2024304757A1Vertical structure deep ultraviolet light emitting diode, manufacturing method thereof and epitaxial structureXIAMEN SILAN ADVANCED COMPOUND SEMICONDUCTOR CO LTD·Filed 2022·Application pending·0 cites
- 1335US2017338361A1Flip-chip Multi-junction Solar Cell and Fabrication Method ThereofXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2017·Application pending·0 cites
- 1432US2017069782A1Four-Junction Solar Cell and Fabrication MethodXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →