Inventor · disambiguated record
Dirk Ehrentraut
Also filed as: EHRENTRAUT DIRK
14 granted patents·5 pending applications·50 citations·filing 2007–2024
89Inventor score
Top patents by PatentIndex Score
19 records- 0193US10648102B2Oxygen-doped group III metal nitride and method of manufactureSLT TECH INC·Filed 2018·Granted May 12, 2020·4 cites·17 claims
- 0293US9589792B2High quality group-III metal nitride crystals, methods of making, and methods of useSORAA INC·Filed 2013·Granted Mar 7, 2017·16 cites·32 claims
- 0393US9543392B1Transparent group III metal nitride and method of manufactureSORAA INC·Filed 2014·Granted Jan 10, 2017·16 cites·22 claims
- 0489US11898269B2Oxygen-doped group III metal nitride and method of manufactureSLT TECH INC·Filed 2020·Granted Feb 13, 2024·2 cites·17 claims
- 0586US10145026B2Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boulesSLT TECH INC·Filed 2013·Granted Dec 4, 2018·2 cites·21 claims
- 0685US10604865B2Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boulesSLT TECH INC·Filed 2018·Granted Mar 31, 2020·1 cites·18 claims
- 0783US12351942B2Oxygen-doped group III metal nitride and method of manufactureSLT TECH INC·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 0882US11721549B2Large area group III nitride crystals and substrates, methods of making, and methods of useSLT TECH INC·Filed 2021·Granted Aug 8, 2023·1 cites·18 claims
- 0980US10301745B2Large area, low-defect gallium-containing nitride crystals, method of making, and method of useSLT TECH INC·Filed 2016·Granted May 28, 2019·1 cites·15 claims
- 1080US2024183074A1Oxygen-doped group iii metal nitride and method of manufactureSLT TECH INC·Filed 2024·Application pending·0 cites
- 1179US11705322B2Group III nitride substrate, method of making, and method of useSLT TECH INC·Filed 2020·Granted Jul 18, 2023·1 cites·24 claims
- 1279US10036099B2Process for large-scale ammonothermal manufacturing of gallium nitride boulesSLT TECH INC·Filed 2015·Granted Jul 31, 2018·3 cites·23 claims
- 1374US9275912B1Method for quantification of extended defects in gallium-containing nitride crystalsSORAA INC·Filed 2013·Granted Mar 1, 2016·3 cites·20 claims
- 1467US2023317444A1Group iii nitride substrate, method of making, and method of useSLT TECH INC·Filed 2023·Application pending·0 cites
- 1565US2024247406A1Process for retrograde solvothermal crystal growth and single crystal grown therebySLT TECH INC·Filed 2024·Application pending·0 cites
- 1663US9404197B2Large area, low-defect gallium-containing nitride crystals, method of making, and method of useD'EVELYN MARK P·Filed 2012·Granted Aug 2, 2016·0 cites·11 claims
- 1756US2023340695A1Large area group iii nitride crystals and substrates, methods of making, and methods of useSLT TECH INC·Filed 2023·Application pending·0 cites
- 1845US2010104495A1Method for producing nitride semiconductor, crystal growth rate increasing agent, single crystal nitride, wafer and deviceMITSUBISHI CHEM CORP·Filed 2007·Application pending·0 cites
- 1940US8920677B2Scintillator material and scintillation detectorKANO MASATAKA·Filed 2011·Granted Dec 30, 2014·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →