Inventor · disambiguated record
Donovan L. Barrett
Also filed as: BARRETT DONOVAN L
13 granted patents·3 pending applications·462 citations·filing 1984–2013
94Inventor score
Top patents by PatentIndex Score
16 records- 0193US8216369B2System for forming SiC crystals having spatially uniform doping impuritiesGUPTA AVINASH K·Filed 2009·Granted Jul 10, 2012·18 cites·9 claims
- 0291US7608524B2Method of and system for forming SiC crystals having spatially uniform doping impuritiesII VI INC·Filed 2006·Granted Oct 27, 2009·22 cites·9 claims
- 0391US5611955AHigh resistivity silicon carbide substrates for high power microwave devicesNORTHROP GRUMMAN CORP·Filed 1993·Granted Mar 18, 1997·143 cites·13 claims
- 0489US5683507AApparatus for growing large silicon carbide single crystalsNORTHROP GRUMMAN CORP·Filed 1995·Granted Nov 4, 1997·62 cites·13 claims
- 0585US5746827AMethod of producing large diameter silicon carbide crystalsNORTHROP GRUMMAN CORP·Filed 1995·Granted May 5, 1998·57 cites·14 claims
- 0682US5968261AMethod for growing large silicon carbide single crystalsNORTHROP GRUMMAN CORP·Filed 1997·Granted Oct 19, 1999·42 cites·6 claims
- 0777US9017629B2Intra-cavity gettering of nitrogen in SiC crystal growthZWIEBACK ILYA·Filed 2006·Granted Apr 28, 2015·6 cites·8 claims
- 0876US5895583AMethod of preparing silicon carbide wafers for epitaxial growthNORTHROP GRUMMAN CORP·Filed 1996·Granted Apr 20, 1999·52 cites·8 claims
- 0972US4594173AIndium doped gallium arsenide crystals and method of preparationWESTINGHOUSE ELECTRIC CORP·Filed 1984·Granted Jun 10, 1986·17 cites·6 claims
- 1067US5788768AFeedstock arrangement for silicon carbide boule growthNORTHROP GRUMMAN CORP·Filed 1997·Granted Aug 4, 1998·19 cites·8 claims
- 1162US2011303884A1SiC Crystals Having Spatially Uniform Doping ImpuritiesGUPTA AVINASH K·Filed 2011·Application pending·0 cites
- 1255US5937317AMethod of making a low resistivity silicon carbide bouleNORTHROP GRUMMAN CORP·Filed 1997·Granted Aug 10, 1999·12 cites·7 claims
- 1353US9388509B2Method for synthesizing ultrahigh-purity silicon carbideII VI INC·Filed 2013·Granted Jul 12, 2016·0 cites·17 claims
- 1440US5501173AMethod for epitaxially growing α-silicon carbide on a-axis α-silicon carbide substratesWESTINGHOUSE ELECTRIC CORP·Filed 1993·Granted Mar 26, 1996·12 cites·5 claims
- 1540US2008190355A1Low-Doped Semi-Insulating Sic Crystals and MethodII VI INC·Filed 2005·Application pending·0 cites
- 1640US2009220788A1Method for synthesizing ultrahigh-purity silicon carbideII VI INC·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →