Inventor · disambiguated record
Deok-Sin Kil
Also filed as: KIL DEOK-SIN
43 granted patents·14 pending applications·520 citations·filing 2002–2022
97Inventor score
Top patents by PatentIndex Score
57 records- 0198US7910452B2Method for fabricating a cylinder-type capacitor utilizing a connected ring structureHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 22, 2011·325 cites·30 claims
- 0297US9685215B1Semiconductor memory device including a ferroelectric layerSK HYNIX INC·Filed 2016·Granted Jun 20, 2017·28 cites·19 claims
- 0393US7835134B2Capacitor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Nov 16, 2010·19 cites·12 claims
- 0489US11094778B2Capacitor with high work function interface layerSK HYNIX INC·Filed 2020·Granted Aug 17, 2021·2 cites·18 claims
- 0589US8362457B2Semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2010·Granted Jan 29, 2013·14 cites·23 claims
- 0688US8134195B2Semiconductor device and method of fabricating the sameLEE KEE-JEUNG·Filed 2008·Granted Mar 13, 2012·14 cites·36 claims
- 0787US10700162B2Capacitor with high work function interface layerSK HYNIX INC·Filed 2019·Granted Jun 30, 2020·3 cites·16 claims
- 0887US7616426B2Capacitor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Nov 10, 2009·10 cites·32 claims
- 0986US10347711B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2018·Granted Jul 9, 2019·2 cites·20 claims
- 1085US7772132B2Method for forming tetragonal zirconium oxide layer and method for fabricating capacitor having the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Aug 10, 2010·10 cites·28 claims
- 1182US10910383B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2020·Granted Feb 2, 2021·1 cites·18 claims
- 1282US7670903B2Method for fabricating a cylindrical capacitor using amorphous carbon-based layerHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 2, 2010·10 cites·36 claims
- 1379US7416936B2Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Aug 26, 2008·5 cites·8 claims
- 1478US10672772B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2017·Granted Jun 2, 2020·2 cites·19 claims
- 1578US8017491B2Method for fabricating capacitorHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Sep 13, 2011·7 cites·32 claims
- 1678US7361544B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Apr 22, 2008·7 cites·21 claims
- 1775US8288274B2Method of forming noble metal layer using ozone reaction gasKIL DEOK-SIN·Filed 2008·Granted Oct 16, 2012·5 cites·7 claims
- 1874US7037801B1Method for forming capacitor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted May 2, 2006·4 cites·9 claims
- 1974US6849300B2Method for forming high dielectric layers using atomic layer depositionHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Feb 1, 2005·19 cites·25 claims
- 2073US10622378B2Multi-level ferroelectric memory device and method of manufacturing the sameSK HYNIX INC·Filed 2018·Granted Apr 14, 2020·1 cites·9 claims
- 2173US7754577B2Method for fabricating capacitorHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jul 13, 2010·4 cites·8 claims
- 2272US7781336B2Semiconductor device including ruthenium electrode and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Aug 24, 2010·3 cites·13 claims
- 2371US8092862B2Method for forming dielectric film and method for forming capacitor in semiconductor device using the sameKIL DEOK SIN·Filed 2010·Granted Jan 10, 2012·2 cites·7 claims
- 2469US7910428B2Capacitor with pillar type storage node and method for fabricating the same including conductive capping layerHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Mar 22, 2011·3 cites·12 claims
- 2568US8441100B2Capacitor with pillar type storage node and method for fabricating the sameLEE KEE-JEUNG·Filed 2011·Granted May 14, 2013·2 cites·13 claims
- 2668US2023057319A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2022·Application pending·0 cites
- 2765US6645805B2Method for forming dielectric film of capacitorHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 11, 2003·9 cites·20 claims
- 2862US8148231B2Method of fabricating capacitorDO KWAN-WOO·Filed 2008·Granted Apr 3, 2012·1 cites·12 claims
- 2962US8035193B2Method of fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Oct 11, 2011·2 cites·14 claims
- 3061US11515157B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2019·Granted Nov 29, 2022·0 cites·23 claims
- 3158US10748930B2Multi-level ferroelectric memory device and method of manufacturing the sameSK HYNIX INC·Filed 2018·Granted Aug 18, 2020·0 cites·4 claims
- 3258US7446053B2Capacitor with nano-composite dielectric layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Nov 4, 2008·1 cites·19 claims
- 3358US7229888B2Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Jun 12, 2007·5 cites·2 claims
- 3455US9954000B2Multi-level ferroelectric memory device and method of manufacturing the sameSK HYNIX INC·Filed 2016·Granted Apr 24, 2018·0 cites·11 claims
- 3555US2009148625A1Method for forming thin filmHYNIX SEMICONDUCTOR INC·Filed 2009·Application pending·0 cites
- 3653US9214467B2Method for fabricating capacitorSK HYNIX INC·Filed 2015·Granted Dec 15, 2015·0 cites·10 claims
- 3750US8048758B2Method for fabricating a capacitor utilizes the sacrificial pattern covering the cell regionHYNIX SEMICONDUCTOR INC·Filed 2011·Granted Nov 1, 2011·0 cites·11 claims
- 3850US8048757B2Method for fabricating capacitor utilizes a sacrificial pattern enclosing the upper outer walls of the storage nodesHYNIX SEMICONDUCTOR INC·Filed 2011·Granted Nov 1, 2011·0 cites·12 claims
- 3950US7816202B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Oct 19, 2010·0 cites·27 claims
- 4049US10734392B2Resistive memory device including ferroelectrics and method of manufacturing the sameSK HYNIX INC·Filed 2018·Granted Aug 4, 2020·0 cites·8 claims
- 4149US2008138503A1Method For Forming Dielectric Film And Method For Forming Capacitor In Semiconductor Device Using The SameHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 4248US2013022744A1Method of forming noble metal layer using ozone reaction gasHYNIX SEMICONDUCTOR INC·Filed 2012·Application pending·0 cites
- 4347US2012147519A1Electrode in semiconductor device, capacitor and method of fabricating the sameDO KWAN-WOO·Filed 2012·Application pending·0 cites
- 4447US2010096609A1Phase change memory device having a layered phase change layer composed of multiple phase change materials and method for manufacturing the sameKIM JIN HYOCK·Filed 2009·Application pending·0 cites
- 4547US2006183301A1Method for forming thin filmYEOM SEUNG-JIN·Filed 2005·Application pending·0 cites
- 4646US8946047B2Method for fabricating capacitorKIM JIN-HYOCK·Filed 2010·Granted Feb 3, 2015·0 cites·10 claims
- 4746US8120180B2Semiconductor device including ruthenium electrode and method for fabricating the sameKIM JIN-HYOCK·Filed 2010·Granted Feb 21, 2012·0 cites·8 claims
- 4844US7259059B2Method for forming capacitor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Aug 21, 2007·0 cites·10 claims
- 4944US2009273882A1Capacitor and method for fabricating the samePARK KYUNG-WOONG·Filed 2009·Application pending·0 cites
- 5043US2009002917A1Capacitor in semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
Showing the top 50 of 57 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →