Inventor · disambiguated record
Ralph N. Wall
Also filed as: WALL RALPH · WALL RALPH N
23 granted patents·1 pending application·71 citations·filing 2001–2024
93Inventor score
Files withSEMICONDUCTOR COMPONENTS IND LLC10MAXIM INTEGRATED PRODUCTS7SEMICONDUCTOR COMPONENTS IND2BOUCHE GUILLAUME1GODSHALK EDWARD MARTIN1
Top patents by PatentIndex Score
24 records- 0191US7612488B1Method to control BAW resonator top electrode edge during patterningMAXIM INTEGRATED PRODUCTS·Filed 2007·Granted Nov 3, 2009·19 cites·28 claims
- 0285US10727326B2Trench-gate insulated-gate bipolar transistors (IGBTs)SEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jul 28, 2020·4 cites·18 claims
- 0378US9337178B2Method of forming an ESD device and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2013·Granted May 10, 2016·4 cites·14 claims
- 0476US9111758B2Semiconductor component and method of manufactureSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Aug 18, 2015·3 cites·20 claims
- 0575US12284834B2Semiconductor devices and methods of manufacturing semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Granted Apr 22, 2025·0 cites·20 claims
- 0675US11056581B2Trench-gate insulated-gate bipolar transistorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jul 6, 2021·2 cites·18 claims
- 0772US8512800B2Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filtersGODSHALK EDWARD MARTIN·Filed 2007·Granted Aug 20, 2013·9 cites·9 claims
- 0867US6919984B2Metal trim mirror for optimized thin film resistor laser trimmingMAXIM INTEGRATED PRODUCTS·Filed 2003·Granted Jul 19, 2005·6 cites·26 claims
- 0966US12087760B2Semiconductor devices and methods of manufacturing semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 1065US6855585B1Integrating multiple thin film resistorsMAXIM INTEGRATED PRODUCTS·Filed 2001·Granted Feb 15, 2005·15 cites·16 claims
- 1160US11670706B2Methods of manufacture for trench-gate insulated-gate bipolar transistors (IGBTs)SEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Jun 6, 2023·0 cites·20 claims
- 1260US8522411B1Method to control BAW resonator top electrode edge during patterningBOUCHE GUILLAUME·Filed 2009·Granted Sep 3, 2013·3 cites·16 claims
- 1357US7600303B1BAW resonator bi-layer top electrode with zero etch undercutMAXIM INTEGRATED PRODUCTS·Filed 2006·Granted Oct 13, 2009·3 cites·15 claims
- 1455US7737612B1BAW resonator bi-layer top electrode with zero etch undercutMAXIM INTEGRATED PRODUCTS·Filed 2008·Granted Jun 15, 2010·2 cites·30 claims
- 1549US12166068B2Electronic device including a semiconductor layer within a trench and a semiconductor layer and a process of forming the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 1648US9564424B2ESD device and structure thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Feb 7, 2017·0 cites·17 claims
- 1748US7960200B2Orientation-dependent etching of deposited AlN for structural use and sacrificial layers in MEMSMAXIM INTEGRATED PRODUCTS·Filed 2007·Granted Jun 14, 2011·0 cites·39 claims
- 1847US8952768B2Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filtersTRIQUINT SEMICONDUCTOR INC·Filed 2013·Granted Feb 10, 2015·0 cites·6 claims
- 1943US10546948B1Electronic device including an insulated gate bipolar transistor having a field-stop region and a process of forming the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jan 28, 2020·0 cites·20 claims
- 2042US8201311B1Process of making a BAW resonator bi-layer top electrodeHAMOU HAIM BEN·Filed 2008·Granted Jun 19, 2012·1 cites·14 claims
- 2141US10128330B1Semiconductor device with a buried junction layer having an interspersed pattern of doped and counter-doped materialsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Nov 13, 2018·0 cites·6 claims
- 2241US7567024B2Methods of contacting the top layer of a BAW resonatorMAXIM INTEGRATED PRODUCTS·Filed 2007·Granted Jul 28, 2009·0 cites·3 claims
- 2336US10388726B2Accumulation enhanced insulated gate bipolar transistor (AEGT) and methods of use thereofSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Aug 20, 2019·0 cites·20 claims
- 2434US2007035364A1Titanium-tungsten alloy based mirrors and electrodes in bulk acoustic wave devicesSRIDHAR UPPILI·Filed 2005·Application pending·0 cites
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