Inventor · disambiguated record
Yuhei Ikemoto
Also filed as: IKEMOTO YUHEI
6 granted patents·5 pending applications·37 citations·filing 2005–2018
76Inventor score
Top patents by PatentIndex Score
11 records- 0190US7576363B2Group III nitride compound semiconductor light emitting deviceTOYODA GOSEI KK·Filed 2005·Granted Aug 18, 2009·29 cites·21 claims
- 0275US7524741B2Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting deviceTOYODA GOSEI KK·Filed 2006·Granted Apr 28, 2009·6 cites·14 claims
- 0361US7572652B2Light emitting element and production method thereofTOYODA GOSEI KK·Filed 2007·Granted Aug 11, 2009·2 cites·15 claims
- 0450US2007134833A1Semiconductor element and method of making sameKOHA CO LTD·Filed 2006·Application pending·0 cites
- 0548US8735927B2Group III nitride semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2012·Granted May 27, 2014·0 cites·6 claims
- 0645US2010270548A1Semiconductor element and method of making sameIKEMOTO YUHEI·Filed 2010·Application pending·0 cites
- 0742US2007131951A1Light-emitting element and making method thereofKOHA CO LTD·Filed 2006·Application pending·0 cites
- 0841US2009001384A1Group III Nitride semiconductor HFET and method for producing the sameTOYODA GOSEI KK·Filed 2008·Application pending·0 cites
- 0939US9117972B2Group III nitride semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2012·Granted Aug 25, 2015·0 cites·20 claims
- 1039US2011303938A1Group III nitride semiconductor light-emitting elementUEMURA TOSHIYA·Filed 2010·Application pending·0 cites
- 1137US11355593B2Semiconductor deviceTOYODA GOSEI KK·Filed 2018·Granted Jun 7, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →