Inventor · disambiguated record
Jen-Inn Chyi
Also filed as: CHYI JEN-INN
43 granted patents·18 pending applications·284 citations·filing 1995–2020
97Inventor score
Top patents by PatentIndex Score
61 records- 0193US7598105B2Light emitting diode structure and method for fabricating the sameTEKCORE CO LTD·Filed 2007·Granted Oct 6, 2009·22 cites·23 claims
- 0285US7713769B2Method for fabricating light emitting diode structure having irregular serrationsTEKCORE CO LTD·Filed 2007·Granted May 11, 2010·10 cites·9 claims
- 0385US5637146AMethod for the growth of nitride based semiconductors and its apparatusSATURN COSMOS CO LTD·Filed 1995·Granted Jun 10, 1997·58 cites·23 claims
- 0484US7166483B2High brightness light-emitting device and manufacturing process of the light-emitting deviceTEKCORE CO LTD·Filed 2004·Granted Jan 23, 2007·36 cites·6 claims
- 0584US6309895B1Method for fabricating capacitor containing amorphous and polycrystalline ferroelectric films and method for forming amorphous ferroelectric filmPREC INSTR DEV CT NAT SCIENCE·Filed 1999·Granted Oct 30, 2001·62 cites·10 claims
- 0683US10134735B2Heterogeneously integrated semiconductor device and manufacturing method thereofNAT APPLIED RES LABORATORIES·Filed 2017·Granted Nov 20, 2018·3 cites·18 claims
- 0781US9214518B1Using molecular beam epitaxy in a semiconductor structure with a high K/GaSb interfaceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 15, 2015·6 cites·8 claims
- 0880US7335523B2Process for manufacturing a light-emitting deviceTEKCORE CO LTD·Filed 2006·Granted Feb 26, 2008·9 cites·19 claims
- 0979US10107824B2Method for detecting cardiovascular disease biomarkerUNIV NAT TSING HUA·Filed 2016·Granted Oct 23, 2018·2 cites·11 claims
- 1078US8679881B1Growth method for reducing defect density of gallium nitrideTEKCORE CO LTD·Filed 2013·Granted Mar 25, 2014·6 cites·10 claims
- 1177US8629012B2Method for forming antimony-based FETs monolithicallyLIN HENG-KUANG·Filed 2012·Granted Jan 14, 2014·5 cites·20 claims
- 1277US8101447B2Light emitting diode element and method for fabricating the sameLIN HUNG-CHENG·Filed 2007·Granted Jan 24, 2012·6 cites·7 claims
- 1375US6720570B2Gallium nitride-based semiconductor light emitting deviceTEKCORE CO LTD·Filed 2002·Granted Apr 13, 2004·22 cites·14 claims
- 1474US7608532B2Method of growing nitride semiconductor materialUNIV NAT CENTRAL·Filed 2008·Granted Oct 27, 2009·4 cites·7 claims
- 1572US7456423B2Quantum dot optoelectronic device having an Sb-containing overgrown layerUNIV NAT CENTRAL·Filed 2006·Granted Nov 25, 2008·5 cites·9 claims
- 1669US8406579B2Wavelength division multiplexing and optical modulation apparatusLU HUNG-CHIH·Filed 2011·Granted Mar 26, 2013·2 cites·4 claims
- 1769US7462505B2Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compoundTEKCORE CO LTD·Filed 2005·Granted Dec 9, 2008·4 cites·17 claims
- 1868US7799593B2Light emitting diode structure and method for fabricating the sameTEKCORE CO LTD·Filed 2009·Granted Sep 21, 2010·2 cites·6 claims
- 1967US11515307B2Heterogeneously integrated semiconductor device and manufacturing method thereofNAT APPLIED RES LABORATORIES·Filed 2020·Granted Nov 29, 2022·0 cites·20 claims
- 2065US8426226B2Method for fabricating integrated alternating-current light-emitting-diode moduleCHYI JEN-INN·Filed 2012·Granted Apr 23, 2013·1 cites·13 claims
- 2163US8524583B2Method for growing semipolar nitrideCHYI JEN-INN·Filed 2011·Granted Sep 3, 2013·2 cites·10 claims
- 2263US8253167B2Method for forming antimony-based FETs monolithicallyLIN HENG-KUANG·Filed 2010·Granted Aug 28, 2012·2 cites·20 claims
- 2363US7705361B2Heterojunction bipolar transistor having (In)(Al) GaAsSb/InGaAs base-collector structureUNIV NAT CENTRAL·Filed 2007·Granted Apr 27, 2010·2 cites·5 claims
- 2461US8048786B2Method for fabricating single-crystalline substrate containing gallium nitrideUNIV NAT CENTRAL·Filed 2008·Granted Nov 1, 2011·1 cites·9 claims
- 2561US7674642B2Method of fabricating linear cascade high-speed green light emitting diodeUNIV NAT CENTRAL·Filed 2007·Granted Mar 9, 2010·2 cites·17 claims
- 2659US10727231B2Heterogeneously integrated semiconductor device and manufacturing method thereofNAT APPLIED RES LABORATORIES·Filed 2018·Granted Jul 28, 2020·0 cites·20 claims
- 2755US8586995B2Semiconductor element having high breakdown voltageCHYI JEN-INN·Filed 2012·Granted Nov 19, 2013·1 cites·12 claims
- 2855US8478091B2Single-Stage 1×5 grating-assisted wavelength division multiplexerLU HUNG-CHIH·Filed 2011·Granted Jul 2, 2013·1 cites·3 claims
- 2953US11049961B2High electron mobility transistor and methods for manufacturing the sameEPISTAR CORP·Filed 2019·Granted Jun 29, 2021·0 cites·15 claims
- 3051US6881602B2Gallium nitride-based semiconductor light emitting device and methodTEKCORE CO LTD·Filed 2003·Granted Apr 19, 2005·3 cites·16 claims
- 3150US2009320924A1Solar Cell StructureCHYI JEN-INN·Filed 2008·Application pending·0 cites
- 3249US7445949B2Method of manufacturing semiconductor laser device structureUNIV NAT CENTRAL·Filed 2004·Granted Nov 4, 2008·2 cites·10 claims
- 3349US2010295017A1Light emitting diode element and method for fabricating the sameLIN HUNG-CHENG·Filed 2010·Application pending·0 cites
- 3448US9752972B2Transistor-type viscosity sensor, and viscosity measurement system and viscosity measuring method using the sameNAT UNIV TSING HUA·Filed 2014·Granted Sep 5, 2017·0 cites·30 claims
- 3548US2010140653A1Light emitting diode structure and method for fabricating the sameLIN HUNG-CHENG·Filed 2010·Application pending·0 cites
- 3648US2008296601A1Light-Emitting Diode Incorporating an Array of Light Extracting SpotsCHYI JEN-INN·Filed 2008·Application pending·0 cites
- 3747US2011045658A1Method for fabricating a semi-polar nitride semiconductorLIU HSUEH-HSING·Filed 2009·Application pending·0 cites
- 3845US2008017100A1Method for fabricating single-crystal GaN based substrateUNIV NAT CENTRAL·Filed 2006·Application pending·0 cites
- 3945US2007012930A1High brightness light-emitting device and manufacturing process of the light-emitting deviceLIU YU-CHUAN·Filed 2006·Application pending·0 cites
- 4044US10868128B2Ohmic contact structure, semiconductor device including an ohmic contact structure, and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 4144US10283631B2Semiconductor device and method of fabricating the sameDELTA ELECTRONICS INC·Filed 2016·Granted May 7, 2019·0 cites·21 claims
- 4244US9093510B2Field effect transistor deviceUNIV NAT CENTRAL·Filed 2013·Granted Jul 28, 2015·0 cites·20 claims
- 4344US2006121642A1Manufacturing process of light-emitting deviceLIU YU-CHUAN·Filed 2006·Application pending·0 cites
- 4444US2007295951A1Light-emitting diode incorporating an array of light extracting spotsCHYI JEN-INN·Filed 2006·Application pending·0 cites
- 4543US9640672B2Diode device and method for manufacturing the sameUNIV NAT CENTRAL·Filed 2016·Granted May 2, 2017·0 cites·22 claims
- 4643US9076650B2Method for fabricating mesa sidewall with spin coated dielectric material and semiconductor element thereofUNIV NAT CENTRAL·Filed 2013·Granted Jul 7, 2015·0 cites·6 claims
- 4743US7227192B2Light-emitting device and manufacturing process of the light-emitting deviceTEKCORE CO LTD·Filed 2004·Granted Jun 5, 2007·1 cites·39 claims
- 4843US6514814B2Capacitor containing amorphous and polycrystalline ferroelectric films and fabrication method therefor, and method for forming amorphous ferroelectric filmPREC INSTR DEV CT NAT SCIENCE·Filed 2001·Granted Feb 4, 2003·2 cites·18 claims
- 4942US2007298592A1Method for manufacturing single crystalline gallium nitride material substrateUNIV NAT CENTRAL·Filed 2006·Application pending·0 cites
- 5041US9070708B2Semiconductor device and manufacturing method thereofUNIV NAT CENTRAL·Filed 2014·Granted Jun 30, 2015·0 cites·11 claims
Showing the top 50 of 61 patent records by PatentIndex Score.
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