Inventor · disambiguated record
Bruce Gittleman
Also filed as: GITTLEMAN BRUCE · GITTLEMAN BRUCE D · GITTLEMAN BRUCE DAVID
10 granted patents·4 pending applications·497 citations·filing 1997–2024
91Inventor score
Top patents by PatentIndex Score
14 records- 0198US11761057B1Method for refining one or more critical mineralsLYTEN INC·Filed 2023·Granted Sep 19, 2023·4 cites·20 claims
- 0297US12012644B2Collocating a large-scale dissociating reactor near a geothermal energy source for producing green lithium from brinesLYTEN INC·Filed 2023·Granted Jun 18, 2024·1 cites·26 claims
- 0395US6755945B2Ionized PVD with sequential deposition and etchingTOKYO ELECTRON LTD·Filed 2002·Granted Jun 29, 2004·108 cites·43 claims
- 0495US6287435B1Method and apparatus for ionized physical vapor depositionTOKYO ELECTRON LTD·Filed 1999·Granted Sep 11, 2001·156 cites·12 claims
- 0594US6719886B2Method and apparatus for ionized physical vapor depositionTOKYO ELECTRON LTD·Filed 2001·Granted Apr 13, 2004·54 cites·28 claims
- 0692US6117279AMethod and apparatus for increasing the metal ion fraction in ionized physical vapor depositionTOKYO ELECTRON LTD·Filed 1998·Granted Sep 12, 2000·151 cites·14 claims
- 0791US12221670B2Collocating a large-scale dissociating reactor near a geothermal energy source for green refinement of critical minerals from brinesLYTEN INC·Filed 2024·Granted Feb 11, 2025·0 cites·22 claims
- 0885US2023304129A1Collocating a large-scale dissociating reactor near a geothermal energy source for producing green lithium from brinesLYTEN INC·Filed 2023·Application pending·0 cites
- 0958US7744735B2Ionized PVD with sequential deposition and etchingTOKYO ELECTRON LTD·Filed 2004·Granted Jun 29, 2010·6 cites·30 claims
- 1054US7901545B2Ionized physical vapor deposition (iPVD) processTOKYO ELECTRON LTD·Filed 2004·Granted Mar 8, 2011·6 cites·12 claims
- 1149US2009321247A1IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESSTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 1244US2017073805A1Fabrication methodology for thin film lithium ion devicesE-CHROMIC TECH INC·Filed 2016·Application pending·0 cites
- 1342US6107195AMethod for depositing a low-resistivity titanium-oxynitride (TiON) film that provides for good texture of a subsequently deposited conductor layerTOKYO ELECTRON LTD·Filed 1997·Granted Aug 22, 2000·11 cites·9 claims
- 1441US2005147742A1Processing chamber components, particularly chamber shields, and method of controlling temperature thereofTOKYO ELECTRON LTD·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →