Inventor · disambiguated record
Jing-Ru Lin
Also filed as: LIN JING-RU
6 granted patents·7 citations·filing 2016–2022
74Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD6
Top patents by PatentIndex Score
6 records- 0192US11532637B2Embedded flash memory cell including a tunnel dielectric layer having different thicknesses over a memory regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
- 0287US10879257B2Integrated chip having a logic gate electrode and a tunnel dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 29, 2020·3 cites·20 claims
- 0380US12114503B2Integrated chip including a tunnel dielectric layer which has different thicknesses over a protrusion region of a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 0475US9799755B2Method for manufacturing memory device and method for manufacturing shallow trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 24, 2017·2 cites·18 claims
- 0557US10269822B2Method to fabricate uniform tunneling dielectric of embedded flash memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·0 cites·20 claims
- 0645US10505015B2Memory device and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 10, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →