Inventor · disambiguated record
Shengan Xiao
Also filed as: XIAO SHENGAN
11 granted patents·5 pending applications·35 citations·filing 2010–2022
86Inventor score
Files withXIAO SHENGAN5SHANGHAI HUAHONG NEC ELECT CO4LIU JIQUAN2SHENZHEN SANRISE TECH CO LTD2CHENG XIAOHUA1
Top patents by PatentIndex Score
16 records- 0186US9000516B2Super-junction device and method of forming the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Apr 7, 2015·8 cites·17 claims
- 0281US8779423B2Semiconductor structures and fabrication methods including trench fillingLIU JIQUAN·Filed 2012·Granted Jul 15, 2014·7 cites·24 claims
- 0372US8653586B2Superjunction device and method for manufacturing the sameXIAO SHENGAN·Filed 2012·Granted Feb 18, 2014·4 cites·21 claims
- 0471US8546882B2Terminal structure for superjunction device and method of manufacturing the sameXIAO SHENGAN·Filed 2011·Granted Oct 1, 2013·4 cites·21 claims
- 0569US8716111B2Method for manufacturing trench type superjunction device and trench type superjunction deviceWANG FEI·Filed 2011·Granted May 6, 2014·2 cites·18 claims
- 0669US8273664B2Method for etching and filling deep trenchesCHENG XIAOHUA·Filed 2011·Granted Sep 25, 2012·4 cites·13 claims
- 0768US9123803B2Semiconductor device and method for fabricating the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Sep 1, 2015·3 cites·2 claims
- 0867US8178409B2Semiconductor device with alternately arranged P-type and N-type thin semiconductor layers and method for manufacturing the sameXIAO SHENGAN·Filed 2010·Granted May 15, 2012·2 cites·14 claims
- 0956US8907421B2Superjunction structure, superjunction MOS transistor and manufacturing method thereofXIAO SHENGAN·Filed 2012·Granted Dec 9, 2014·1 cites·12 claims
- 1045US12336234B2Super junction structure and method for manufacturing the sameSHENZHEN SANRISE TECH CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·13 claims
- 1144US12136648B2Super junction device and method for making the sameSHENZHEN SANRISE TECH CO LTD·Filed 2022·Granted Nov 5, 2024·0 cites·6 claims
- 1240US2013234201A1Field stop structure, reverse conducting igbt semiconductor device and methods for manufacturing the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Application pending·0 cites
- 1336US2013130486A1Method of forming silicide layersSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Application pending·0 cites
- 1434US2014042522A1Rf ldmos device and fabrication method thereofSHANGHAI HUA HONG NEC ELECTONICS CO LTD·Filed 2013·Application pending·0 cites
- 1534US2011287613A1Manufacturing method of superjunction structureLIU JIQUAN·Filed 2011·Application pending·0 cites
- 1633US2011241156A1Semiconductor device and method for manufacturing the sameXIAO SHENGAN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →