Inventor · disambiguated record
Te-Hsien Hsieh
Also filed as: HSIEH TE-HSIEN
18 granted patents·6 pending applications·20 citations·filing 2010–2025
89Inventor score
Top patents by PatentIndex Score
24 records- 0188US2025344528A1Channel pattern design to improve carrier transfer efficiencyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0287US2025316457A1Ion beam etching chamber with etching by-product redistributorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0385US11088203B23D RRAM cell structure for reducing forming and set voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·5 cites·20 claims
- 0484US12424419B2Ion beam etching chamber with etching by-product redistributorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 0583US9785046B2Pattern verifying methodUNITED MICROELECTRONICS CORP·Filed 2015·Granted Oct 10, 2017·4 cites·11 claims
- 0683US2025048753A1Channel pattern design to improve carrier transfer efficiencyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0777US12362154B2Ion beam etching chamber with etching by-product redistributorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 0877US12183764B2Channel pattern design to improve carrier transfer efficiencyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·20 claims
- 0974US12456677B2Via landing on first and second barrier layers to reduce cleaning time of conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 28, 2025·0 cites·20 claims
- 1074US9047658B2Method of optical proximity correctionUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jun 2, 2015·4 cites·22 claims
- 1173US8383299B2Double patterning mask set and method of forming thereofUNITED MICROELECTRONICS CORP·Filed 2011·Granted Feb 26, 2013·3 cites·10 claims
- 1272US11751406B23D RRAM cell structure for reducing forming and set voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 1372US8885917B2Mask pattern and correcting method thereofHSIEH TE-HSIEN·Filed 2011·Granted Nov 11, 2014·2 cites·11 claims
- 1469US8283093B2Optical proximity correction processHSIEH TE-HSIEN·Filed 2010·Granted Oct 9, 2012·2 cites·16 claims
- 1566US11776901B2Via landing on first and second barrier layers to reduce cleaning time of conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 1662US11239060B2Ion beam etching chamber with etching by-product redistributorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 1, 2022·0 cites·20 claims
- 1759US2025224563A1Semiconductor device and system for optical signal processingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1856US2024332061A1Isolation structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1950US11690232B2High density memory devices with low cell leakage and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 27, 2023·0 cites·19 claims
- 2048US8745547B1Method for making photomask layoutUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jun 3, 2014·0 cites·13 claims
- 2145US9262820B2Method and apparatus for integrated circuit designUNITED MICROELECTRONICS CORP·Filed 2014·Granted Feb 16, 2016·0 cites·13 claims
- 2242US9747404B2Method for optimizing an integrated circuit layout designUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 29, 2017·0 cites·15 claims
- 2342US8806391B2Method of optical proximity correction according to complexity of mask patternHSIEH TE-HSIEN·Filed 2012·Granted Aug 12, 2014·0 cites·14 claims
- 2442US2015036116A1Aperture for photolithographyUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Te-Hsien Hsieh files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →