Inventor · disambiguated record
Yi-Jyun Huang
Also filed as: HUANG YI-JYUN
12 granted patents·2 pending applications·27 citations·filing 2016–2025
88Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD14
Top patents by PatentIndex Score
14 records- 0194US9773879B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 26, 2017·10 cites·20 claims
- 0292US10971588B2Semiconductor device including FinFET with self-align contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·5 cites·20 claims
- 0392US2025357210A1Methods For Reducing Contact Depth Variation In Semiconductor FabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0488US10340348B2Method of manufacturing finFETs with self-align contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 2, 2019·4 cites·18 claims
- 0588US10164034B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·4 cites·20 claims
- 0683US10522634B2Finfet with self-aligned source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·2 cites·20 claims
- 0781US12438049B2Methods for reducing contact depth variation in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
- 0877US10685880B2Methods for reducing contact depth variation in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 16, 2020·1 cites·20 claims
- 0974US12009399B2Semiconductor device suppressing rounded shapes of source/drain contact layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 11, 2024·0 cites·20 claims
- 1073US10658486B2Mitigation of time dependent dielectric breakdownTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 19, 2020·1 cites·20 claims
- 1169US2022352341A1Mitigation of time dependent dielectric breakdownTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1268US11495494B2Methods for reducing contact depth variation in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 8, 2022·0 cites·16 claims
- 1367US11398559B2Mitigation of time dependent dielectric breakdownTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 1464US11062945B2Methods for reducing contact depth variation in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 13, 2021·0 cites·15 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →