Inventor · disambiguated record
Yunyu Wang
Also filed as: WANG YUNYU
11 granted patents·5 pending applications·1,196 citations·filing 2004–2022
93Inventor score
Top patents by PatentIndex Score
16 records- 0198US9887096B2Differential silicon oxide etchAPPLIED MATERIALS INC·Filed 2015·Granted Feb 6, 2018·113 cites·17 claims
- 0298US9236266B2Dry-etch for silicon-and-carbon-containing filmsAPPLIED MATERIALS INC·Filed 2014·Granted Jan 12, 2016·153 cites·20 claims
- 0398US9034770B2Differential silicon oxide etchAPPLIED MATERIALS INC·Filed 2013·Granted May 19, 2015·181 cites·18 claims
- 0498US8771536B2Dry-etch for silicon-and-carbon-containing filmsZHANG JINGCHUN·Filed 2011·Granted Jul 8, 2014·185 cites·18 claims
- 0598US8679983B2Selective suppression of dry-etch rate of materials containing both silicon and nitrogenWANG YUNYU·Filed 2012·Granted Mar 25, 2014·184 cites·20 claims
- 0698US8679982B2Selective suppression of dry-etch rate of materials containing both silicon and oxygenWANG YUNYU·Filed 2012·Granted Mar 25, 2014·189 cites·20 claims
- 0798US8642481B2Dry-etch for silicon-and-nitrogen-containing filmsAPPLIED MATERIALS INC·Filed 2013·Granted Feb 4, 2014·188 cites·19 claims
- 0877US8541312B2Selective suppression of dry-etch rate of materials containing both silicon and nitrogenAPPLIED MATERIALS INC·Filed 2013·Granted Sep 24, 2013·3 cites·18 claims
- 0962US11944020B2Using aluminum as etch stop layerCROSSBAR INC·Filed 2020·Granted Mar 26, 2024·0 cites·19 claims
- 1057US12312687B2Powder coating deviceXIAMEN YUNMAO TECH CO LTD·Filed 2022·Granted May 27, 2025·0 cites·9 claims
- 1152US10873023B2Using aluminum as etch stop layerCROSSBAR INC·Filed 2017·Granted Dec 22, 2020·0 cites·20 claims
- 1249US2013045605A1Dry-etch for silicon-and-nitrogen-containing filmsAPPLIED MATERIALS INC·Filed 2012·Application pending·0 cites
- 1345US2010117764A1Assisted selective growth of highly dense and vertically aligned carbon nanotubesUNIV TEXAS·Filed 2006·Application pending·0 cites
- 1444US2015154187A1Method, Apparatus And System For Selecting A UserTENCENT TECH SHENZHEN CO LTD·Filed 2015·Application pending·0 cites
- 1537US2022320431A1Varying nitrogen content in switching layer of two-terminal resistive switching devicesCROSSBAR INC·Filed 2021·Application pending·0 cites
- 1635US2005196917A1Method for forming a (111) oriented BSTO thin film layer for high dielectric constant capacitorsFiled 2004·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →