Inventor · disambiguated record
Jingchun Zhang
Also filed as: ZHANG JINGCHUN
36 granted patents·3 pending applications·5,072 citations·filing 2011–2021
99Inventor score
Files withAPPLIED MATERIALS INC29ZHANG JINGCHUN5WANG YUNYU2SHANGHAI HUALI MICROELECT CORP1Suzhou opple lighting co ltd1
Top patents by PatentIndex Score
39 records- 0199US10062578B2Methods for etch of metal and metal-oxide filmsAPPLIED MATERIALS INC·Filed 2015·Granted Aug 28, 2018·94 cites·20 claims
- 0299US9842744B2Methods for etch of SiN filmsAPPLIED MATERIALS INC·Filed 2016·Granted Dec 12, 2017·113 cites·10 claims
- 0399US9754800B2Selective etch for silicon filmsAPPLIED MATERIALS INC·Filed 2016·Granted Sep 5, 2017·110 cites·20 claims
- 0499US9418858B2Selective etch of silicon by way of metastable hydrogen terminationAPPLIED MATERIALS INC·Filed 2014·Granted Aug 16, 2016·138 cites·20 claims
- 0599US9390937B2Silicon-carbon-nitride selective etchAPPLIED MATERIALS INC·Filed 2013·Granted Jul 12, 2016·132 cites·20 claims
- 0699US9343327B2Methods for etch of sin filmsAPPLIED MATERIALS INC·Filed 2015·Granted May 17, 2016·147 cites·16 claims
- 0799US9093390B2Conformal oxide dry etchAPPLIED MATERIALS INC·Filed 2014·Granted Jul 28, 2015·185 cites·17 claims
- 0899US8801952B1Conformal oxide dry etchAPPLIED MATERIALS INC·Filed 2013·Granted Aug 12, 2014·191 cites·18 claims
- 0999US8765574B2Dry etch processAPPLIED MATERIALS INC·Filed 2013·Granted Jul 1, 2014·182 cites·17 claims
- 1098US9887096B2Differential silicon oxide etchAPPLIED MATERIALS INC·Filed 2015·Granted Feb 6, 2018·113 cites·17 claims
- 1198US9881805B2Silicon selective removalAPPLIED MATERIALS INC·Filed 2016·Granted Jan 30, 2018·110 cites·16 claims
- 1298US9576809B2Etch suppression with germaniumAPPLIED MATERIALS INC·Filed 2014·Granted Feb 21, 2017·131 cites·4 claims
- 1398US9564338B1Silicon-selective removalAPPLIED MATERIALS INC·Filed 2015·Granted Feb 7, 2017·124 cites·20 claims
- 1498US9472412B2Procedure for etch rate consistencyAPPLIED MATERIALS INC·Filed 2015·Granted Oct 18, 2016·132 cites·10 claims
- 1598US9449845B2Selective titanium nitride etchingAPPLIED MATERIALS INC·Filed 2014·Granted Sep 20, 2016·138 cites·19 claims
- 1698US9437451B2Radical-component oxide etchAPPLIED MATERIALS INC·Filed 2015·Granted Sep 6, 2016·134 cites·19 claims
- 1798US9324576B2Selective etch for silicon filmsZHANG JINGCHUN·Filed 2011·Granted Apr 26, 2016·152 cites·16 claims
- 1898US9245762B2Procedure for etch rate consistencyAPPLIED MATERIALS INC·Filed 2014·Granted Jan 26, 2016·165 cites·7 claims
- 1998US9236266B2Dry-etch for silicon-and-carbon-containing filmsAPPLIED MATERIALS INC·Filed 2014·Granted Jan 12, 2016·153 cites·20 claims
- 2098US9064815B2Methods for etch of metal and metal-oxide filmsZHANG JINGCHUN·Filed 2012·Granted Jun 23, 2015·564 cites·10 claims
- 2198US9034770B2Differential silicon oxide etchAPPLIED MATERIALS INC·Filed 2013·Granted May 19, 2015·181 cites·18 claims
- 2298US9023734B2Radical-component oxide etchAPPLIED MATERIALS INC·Filed 2013·Granted May 5, 2015·182 cites·19 claims
- 2398US8999856B2Methods for etch of sin filmsZHANG JINGCHUN·Filed 2012·Granted Apr 7, 2015·187 cites·17 claims
- 2498US8921234B2Selective titanium nitride etchingAPPLIED MATERIALS INC·Filed 2013·Granted Dec 30, 2014·187 cites·21 claims
- 2598US8808563B2Selective etch of silicon by way of metastable hydrogen terminationWANG ANCHUAN·Filed 2012·Granted Aug 19, 2014·184 cites·20 claims
- 2698US8771539B2Remotely-excited fluorine and water vapor etchZHANG JINGCHUN·Filed 2011·Granted Jul 8, 2014·185 cites·14 claims
- 2798US8771536B2Dry-etch for silicon-and-carbon-containing filmsZHANG JINGCHUN·Filed 2011·Granted Jul 8, 2014·185 cites·18 claims
- 2898US8679983B2Selective suppression of dry-etch rate of materials containing both silicon and nitrogenWANG YUNYU·Filed 2012·Granted Mar 25, 2014·184 cites·20 claims
- 2998US8679982B2Selective suppression of dry-etch rate of materials containing both silicon and oxygenWANG YUNYU·Filed 2012·Granted Mar 25, 2014·189 cites·20 claims
- 3098US8642481B2Dry-etch for silicon-and-nitrogen-containing filmsAPPLIED MATERIALS INC·Filed 2013·Granted Feb 4, 2014·188 cites·19 claims
- 3182US11637002B2Methods and systems to enhance process uniformityAPPLIED MATERIALS INC·Filed 2014·Granted Apr 25, 2023·4 cites·20 claims
- 3282US10892198B2Systems and methods for improved performance in semiconductor processingAPPLIED MATERIALS INC·Filed 2018·Granted Jan 12, 2021·4 cites·14 claims
- 3377US8541312B2Selective suppression of dry-etch rate of materials containing both silicon and nitrogenAPPLIED MATERIALS INC·Filed 2013·Granted Sep 24, 2013·3 cites·18 claims
- 3468US10026597B2Hydrogen plasma based cleaning process for etch hardwareAPPLIED MATERIALS INC·Filed 2017·Granted Jul 17, 2018·1 cites·20 claims
- 3559US11796142B2Spot lampSuzhou opple lighting co ltd·Filed 2021·Granted Oct 24, 2023·0 cites·13 claims
- 3654US11239061B2Methods and systems to enhance process uniformityAPPLIED MATERIALS INC·Filed 2017·Granted Feb 1, 2022·0 cites·20 claims
- 3749US2013045605A1Dry-etch for silicon-and-nitrogen-containing filmsAPPLIED MATERIALS INC·Filed 2012·Application pending·0 cites
- 3843US2019304756A1Semiconductor chamber coatings and processesAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 3936US2013138415A1Method and model for monitoring pretreatment process of low-k block layerSHANGHAI HUALI MICROELECT CORP·Filed 2012·Application pending·0 cites
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