Inventor · disambiguated record
Naoya Sashida
Also filed as: SASHIDA NAOYA
36 granted patents·12 pending applications·344 citations·filing 1999–2017
97Inventor score
Files withFUJITSU LTD17FUJITSU SEMICONDUCTOR LTD14FUJITSU MICROELECTRONICS LTD10SASHIDA NAOYA5IZUMI KAZUTOSHI1
Top patents by PatentIndex Score
48 records- 0195US7642099B2Manufacturing method for ferroelectric memory deviceSEIKO EPSON CORP·Filed 2007·Granted Jan 5, 2010·38 cites·3 claims
- 0291US7781284B2Semiconductor device and method of manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2010·Granted Aug 24, 2010·8 cites·2 claims
- 0390US7285460B2Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2005·Granted Oct 23, 2007·11 cites·11 claims
- 0490US6953950B2Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2003·Granted Oct 11, 2005·32 cites·8 claims
- 0589US7598557B2Semiconductor device and method for fabricating a semicondutor device including first and second hydrogen diffusion preventing filmsFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Oct 6, 2009·13 cites·24 claims
- 0688US7518173B2Semiconductor device having ferroelectric capacitor and its manufacture methodFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Apr 14, 2009·19 cites·6 claims
- 0787US6509593B2Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2000·Granted Jan 21, 2003·50 cites·4 claims
- 0884US7176132B2Manufacturing method of semiconductor deviceFUJITSU LTD·Filed 2003·Granted Feb 13, 2007·30 cites·17 claims
- 0982US6673672B2Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2002·Granted Jan 6, 2004·23 cites·14 claims
- 1081US7579641B2Ferroelectric memory deviceFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Aug 25, 2009·7 cites·11 claims
- 1181US6501112B1Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2000·Granted Dec 31, 2002·23 cites·14 claims
- 1279US7745232B2Semiconductor device and method of manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Jun 29, 2010·7 cites·15 claims
- 1379US7153735B2Method of manufacturing semiconductor deviceFUJITSU LTD·Filed 2005·Granted Dec 26, 2006·6 cites·19 claims
- 1477US7476921B2Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2007·Granted Jan 13, 2009·3 cites·7 claims
- 1573US9508559B2Semiconductor wafer and method for manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Nov 29, 2016·4 cites·11 claims
- 1673US6872617B2Semiconductor device manufacturing methodFUJITSU LTD·Filed 2003·Granted Mar 29, 2005·14 cites·19 claims
- 1768US9773794B2Semiconductor device and method of manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2016·Granted Sep 26, 2017·2 cites·9 claims
- 1868US7456454B2Ferroelectric semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2002·Granted Nov 25, 2008·13 cites·12 claims
- 1967US7893472B2Ferroelectric memory device, ferroelectric memory manufacturing method, and semiconductor manufacturing methodFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Feb 22, 2011·3 cites·6 claims
- 2065US7678646B2Semiconductor device and manufacturing method of the sameFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Mar 16, 2010·3 cites·6 claims
- 2164US7790476B2Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Sep 7, 2010·2 cites·7 claims
- 2263US7655531B2Semiconductor device and method for fabricating the sameFUJITSU MICROELECTRONICS LTD·Filed 2008·Granted Feb 2, 2010·2 cites·4 claims
- 2363US7547558B2Method for manufacturing semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2004·Granted Jun 16, 2009·11 cites·20 claims
- 2462US7473980B2Semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 2006·Granted Jan 6, 2009·2 cites·6 claims
- 2562US6913970B2Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2002·Granted Jul 5, 2005·10 cites·15 claims
- 2661US7528432B2Semiconductor device having a capacitor and protection insulating films for sameFUJITSU MICROELECTRONICS LTD·Filed 2003·Granted May 5, 2009·6 cites·4 claims
- 2759US2009127657A1Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2008·Application pending·0 cites
- 2856US2009278231A1Semiconductor device and method for fabricating the sameFUJITSU MICROELECTRONICS LTD·Filed 2009·Application pending·0 cites
- 2955US8120087B2Ferroelectric capacitor with underlying conductive filmSASHIDA NAOYA·Filed 2009·Granted Feb 21, 2012·0 cites·8 claims
- 3054US2009160023A1Semiconductor device and manufacturing method thereofFUJITSU MICROELECTRONICS LTD·Filed 2009·Application pending·0 cites
- 3152US8216857B2Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor deviceSASHIDA NAOYA·Filed 2009·Granted Jul 10, 2012·0 cites·11 claims
- 3252US2013295693A1Semiconductor device and method for making semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Application pending·0 cites
- 3350US8815612B2Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor deviceSASHIDA NAOYA·Filed 2012·Granted Aug 26, 2014·0 cites·12 claims
- 3449US9373626B2Semiconductor device and method of manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2015·Granted Jun 21, 2016·0 cites·8 claims
- 3548US8772847B2Semiconductor device and method for producing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2012·Granted Jul 8, 2014·0 cites·20 claims
- 3648US8507965B2Semiconductor device and manufacturing method thereofIZUMI KAZUTOSHI·Filed 2010·Granted Aug 13, 2013·0 cites·5 claims
- 3747US8354701B2Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2010·Granted Jan 15, 2013·0 cites·6 claims
- 3847US7884404B2Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Feb 8, 2011·0 cites·15 claims
- 3947US7501325B2Method for fabricating semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Mar 10, 2009·2 cites·10 claims
- 4047US2005212020A1Semiconductor device and manufacturing method thereofFUJITSU LTD·Filed 2005·Application pending·0 cites
- 4147US2018102373A1Semiconductor device including ferroelectric capacitor and method of manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2017·Application pending·0 cites
- 4247US2012107965A1Semiconductor device and method for manufacturing the sameSASHIDA NAOYA·Filed 2012·Application pending·0 cites
- 4346US2010301436A1Semiconductor device and method for making semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2010·Application pending·0 cites
- 4442US2016093627A1Semiconductor device and method of manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2015·Application pending·0 cites
- 4541US8558294B2Semiconductor device and fabrication process thereofSASHIDA NAOYA·Filed 2008·Granted Oct 15, 2013·0 cites·7 claims
- 4641US2007063239A1Semiconductor deviceFUJITSU LTD·Filed 2006·Application pending·0 cites
- 4735US2004212041A1Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2003·Application pending·0 cites
- 4830US2001012659A1Method of manufacturing semiconductor device having capacitorFUJITSU LTD·Filed 1999·Application pending·0 cites
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