Inventor · disambiguated record
Chang Ho Maeng
Also filed as: MAENG CHANG · MAENG CHANG HO
8 granted patents·4 pending applications·464 citations·filing 2012–2017
85Inventor score
Top patents by PatentIndex Score
12 records- 0196US9252238B1Semiconductor structures with coplanar recessed gate layers and fabrication methodsGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 2, 2016·427 cites·20 claims
- 0294US10090402B1Methods of forming field effect transistors (FETS) with gate cut isolation regions between replacement metal gatesGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 2, 2018·16 cites·13 claims
- 0388US9922972B1Embedded silicon carbide block patterningGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 20, 2018·6 cites·16 claims
- 0485US9147680B2Integrated circuits having replacement metal gates with improved threshold voltage performance and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 29, 2015·10 cites·19 claims
- 0577US8993445B2Selective removal of gate structure sidewall(s) to facilitate sidewall spacer protectionGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 31, 2015·5 cites·20 claims
- 0651US8900940B2Reducing gate height variance during semiconductor device formationGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 2, 2014·0 cites·20 claims
- 0742US9852900B2Oxidizing filler material lines to increase width of hard mask linesGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 26, 2017·0 cites·10 claims
- 0841US2018040477A1Oxidizing filler material lines to increase width of hard mask linesGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 0940US2014148011A1Method of forming semiconductor finsGLOBALFOUNDRIES INC·Filed 2012·Application pending·0 cites
- 1039US10056458B2Siloxane and organic-based MOL contact patterningGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 21, 2018·0 cites·19 claims
- 1139US2015024584A1Methods for forming integrated circuits with reduced replacement metal gate height variabilityGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 1234US2017162430A1Methods for producing integrated circuits with air gaps and integrated circuits produced from such methodsGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →