Inventor · disambiguated record
Kwang-Dong Yoo
Also filed as: YOO KWANG D · YOO KWANG-DONG
8 granted patents·135 citations·filing 1992–2007
86Inventor score
Files withSAMSUNG ELECTRONICS CO LTD8
Top patents by PatentIndex Score
8 records- 0178US5918135AMethods for forming integrated circuit capacitors including dual electrode depositionsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jun 29, 1999·44 cites·20 claims
- 0273US6815794B2Semiconductor devices with multiple isolation structure and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·21 cites·25 claims
- 0368US5196356AMethod for manufacturing BICMOS devicesSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Mar 23, 1993·32 cites·8 claims
- 0465US6255697B1Integrated circuit devices including distributed and isolated dummy conductive regionsSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jul 3, 2001·29 cites·9 claims
- 0557US7381621B2Methods of fabricating high voltage MOSFET having doped buried layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 3, 2008·1 cites·8 claims
- 0656US6656814B2Methods of fabricating integrated circuit devices including distributed and isolated dummy conductive regionsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 2, 2003·7 cites·8 claims
- 0743US7446000B2Method of fabricating semiconductor device having gate dielectrics with different thicknessesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 4, 2008·0 cites·20 claims
- 0842US7176538B2High voltage MOSFET having doped buried layerSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 13, 2007·1 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →