Inventor · disambiguated record
Ayman Shibib
Also filed as: SHIBIB AYMAN
8 granted patents·3 pending applications·7 citations·filing 2015–2022
78Inventor score
Top patents by PatentIndex Score
11 records- 0177US10381473B2High-electron-mobility transistor with buried interconnectVISHAY SILICONIX·Filed 2017·Granted Aug 13, 2019·2 cites·15 claims
- 0277US10224426B2High-electron-mobility transistor devicesVISHAY SILICONIX·Filed 2017·Granted Mar 5, 2019·2 cites·8 claims
- 0376US9673314B2Semiconductor device with non-uniform trench oxide layerVISHAY SILICONIX·Filed 2015·Granted Jun 6, 2017·2 cites·13 claims
- 0471US10651303B2High-electron-mobility transistor devicesVISHAY SILICONIX·Filed 2019·Granted May 12, 2020·1 cites·12 claims
- 0555US10665711B2High-electron-mobility transistor with buried interconnectVISHAY SILICONIX·Filed 2019·Granted May 26, 2020·0 cites·20 claims
- 0654US11004841B2Semiconductor device having multiple gate padsVISHAY SILICONIX·Filed 2019·Granted May 11, 2021·0 cites·11 claims
- 0751US9978859B2Semiconductor device with non-uniform trench oxide layerVISHAY SILICONIX·Filed 2017·Granted May 22, 2018·0 cites·6 claims
- 0849US2024030339A1Termination structureSILICONIX INCORPORATED·Filed 2022·Application pending·0 cites
- 0947US10256227B2Semiconductor device having multiple gate padsVISHAY SILICONIX·Filed 2016·Granted Apr 9, 2019·0 cites·12 claims
- 1040US2025142925A1Adaptive edge termination by design for efficient and rugged high voltage silicon carbide power deviceVISHAY SILICONIX LLC·Filed 2022·Application pending·0 cites
- 1140US2025261438A1Mosfet deviceVISHAY SILICONIX LLC·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →