Inventor · disambiguated record
Kevin Mcstay
Also filed as: MCSTAY KEVIN
15 granted patents·3 pending applications·286 citations·filing 2000–2024
93Inventor score
Files withIBM7FRIED DAVID M2INFINEON TECHNOLOGIES AG2SEMICONDUCTOR COMPONENTS IND LLC2CHENG KANGGUO1
Top patents by PatentIndex Score
18 records- 0198US9437496B1Merged source drain epitaxyGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 6, 2016·26 cites·20 claims
- 0297US7733109B2Test structure for resistive open detection using voltage contrast inspection and related methodsIBM·Filed 2007·Granted Jun 8, 2010·92 cites·29 claims
- 0396US8395217B1Isolation in CMOSFET devices utilizing buried air bagsCHENG KANGGUO·Filed 2011·Granted Mar 12, 2013·33 cites·18 claims
- 0495US7989298B1Transistor having V-shaped embedded stressorIBM·Filed 2010·Granted Aug 2, 2011·27 cites·20 claims
- 0591US12034025B2Semiconductor devices with single-photon avalanche diodes and isolation structuresSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Jul 9, 2024·2 cites·20 claims
- 0690US8236632B2FET structures with trench implantation to improve back channel leakage and body resistanceFRIED DAVID M·Filed 2010·Granted Aug 7, 2012·10 cites·24 claims
- 0785US8809953B2FET structures with trench implantation to improve back channel leakage and body resistanceFRIED DAVID M·Filed 2012·Granted Aug 19, 2014·6 cites·20 claims
- 0882US6740920B2Vertical MOSFET with horizontally graded channel dopingIBM·Filed 2002·Granted May 25, 2004·27 cites·6 claims
- 0980US12310139B2Semiconductor devices with single-photon avalanche diodes and isolation structuresSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 1077US6573561B1Vertical MOSFET with asymmetrically graded channel dopingIBM·Filed 2002·Granted Jun 3, 2003·23 cites·8 claims
- 1174US6930004B2Self-aligned drain/channel junction in vertical pass transistor DRAM cell design for device scalingIBM·Filed 2003·Granted Aug 16, 2005·16 cites·20 claims
- 1266US8232603B2Gated diode structure and method including relaxed linerCHOU ANTHONY I·Filed 2010·Granted Jul 31, 2012·2 cites·20 claims
- 1365US6693843B1Wordline on and off voltage compensation circuit based on the array device threshold voltageINFINEON TECHNOLOGIES AG·Filed 2002·Granted Feb 17, 2004·14 cites·12 claims
- 1454US6381182B1Combined tracking of WLL and VPP low threshold voltage in DRAM arrayINFINEON TECHNOLOGIES AG·Filed 2000·Granted Apr 30, 2002·8 cites·20 claims
- 1543US2015333145A1High density finfet devices with unmerged finsIBM·Filed 2014·Application pending·0 cites
- 1642US9484269B2Structure and method to control bottom corner threshold in an SOI deviceERVIN JOSEPH·Filed 2010·Granted Nov 1, 2016·0 cites·6 claims
- 1742US2007048925A1Body-Contacted Silicon on Insulation (SOI) field effect transistorsIBM·Filed 2005·Application pending·0 cites
- 1832US2004175897A1Optimized buried strap formation utilizing polycrystalline SixC1-xFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →