Inventor · disambiguated record
Chi-Wook Kim
Also filed as: KIM CHI-WOOK
28 granted patents·1 pending application·527 citations·filing 1998–2016
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD29
Top patents by PatentIndex Score
29 records- 0195US6525988B2Clock generating circuits controlling activation of a delay locked loop circuit on transition to a standby mode of a semiconductor memory device and methods for operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 25, 2003·120 cites·36 claims
- 0295US6526473B1Memory module system for controlling data input and output by connecting selected memory modules to a data lineSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Feb 25, 2003·149 cites·27 claims
- 0392US6324119B1Data input circuit of semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 27, 2001·68 cites·10 claims
- 0486US7161823B2Semiconductor memory device and method of arranging signal and power lines thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 9, 2007·20 cites·47 claims
- 0583US9824946B2Test architecture of semiconductor device, test system, and method of testing semicondurctor devices at wafer levelSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 21, 2017·4 cites·19 claims
- 0675US7184347B2Semiconductor memory devices having separate read and write global data linesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 27, 2007·9 cites·14 claims
- 0773US6898139B2Integrated circuit memory devices and operating methods that are configured to output data bits at a lower rate in a test mode of operationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 24, 2005·19 cites·32 claims
- 0872US7038972B2Double data rate synchronous dynamic random access memory semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 2, 2006·18 cites·20 claims
- 0970US6087851AMethod and apparatus for configuring a semiconductor device for compatibility with multiple logic interfacesSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 11, 2000·23 cites·29 claims
- 1067US7336518B2Layout for equalizer and data line sense amplifier employed in a high speed memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 26, 2008·6 cites·20 claims
- 1167US7317645B2Redundancy repair circuit and a redundancy repair method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 8, 2008·6 cites·20 claims
- 1266US6795372B2Bit line sense amplifier driving control circuits and methods for synchronous drams that selectively supply and suspend supply of operating voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 21, 2004·15 cites·27 claims
- 1365US6236619B1Synchronous dynamic random access memory semiconductor device having write-interrupt-write functionSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 22, 2001·15 cites·8 claims
- 1464US7084684B2Delay stage insensitive to operating voltage and delay circuit including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·10 cites·24 claims
- 1563US7355901B2Synchronous output buffer, synchronous memory device and method of testing access timeSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 8, 2008·4 cites·4 claims
- 1659US7525858B2Semiconductor memory device having local sense amplifierSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 28, 2009·4 cites·19 claims
- 1756US7352646B2Semiconductor memory device and method of arranging a decoupling capacitor thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 1, 2008·4 cites·18 claims
- 1856US7057446B2Reference voltage generating circuit and internal voltage generating circuit for controlling internal voltage levelSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 6, 2006·9 cites·14 claims
- 1955US7298199B2Substrate bias voltage generating circuit for use in a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 20, 2007·4 cites·14 claims
- 2054US7495472B2Circuits/methods for electrically isolating fuses in integrated circuitsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·3 cites·30 claims
- 2151US7110316B2Shared decoupling capacitanceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 19, 2006·6 cites·35 claims
- 2248US7352636B2Circuit and method for generating boosted voltage in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 1, 2008·0 cites·9 claims
- 2347US7068083B2Synchronous output buffer, synchronous memory device and method of testing access timeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 27, 2006·4 cites·20 claims
- 2443US6229756B1Semiconductor memory device capable of preventing mis-operation due to load of column address lineSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 8, 2001·4 cites·8 claims
- 2539US7075849B2Semiconductor memory device and layout method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 11, 2006·2 cites·15 claims
- 2639US6777987B2Signal buffer for high-speed signal transmission and signal line driving circuit including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 17, 2004·1 cites·45 claims
- 2739US2010128544A1Bit line bridge detecting method in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 2837US7688651B2Methods and devices for regulating the timing of control signals in integrated circuit memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 30, 2010·0 cites·26 claims
- 2935US7692985B2Semiconductor memory device capable of detecting bridge defects and bridge defect detecting method performed in the semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 6, 2010·0 cites·28 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →